Reduction of threading dislocations by InGaAs interlayer in GaAs layers grown on Si substrates

1998 ◽  
Vol 73 (20) ◽  
pp. 2917-2919 ◽  
Author(s):  
Y. Takano ◽  
M. Hisaka ◽  
N. Fujii ◽  
K. Suzuki ◽  
K. Kuwahara ◽  
...  
Keyword(s):  
Threading Dislocations ◽  
Si Substrates

Anisotropy of interfacial defects in the initial stage of MOVPE GaAs growth On Si

1990 ◽  
Vol 48 (4) ◽  
pp. 592-593
Author(s):  
C. Vannuffel ◽  
C. Schiller ◽  
J. P. Chevalier
Keyword(s):  
Early Stage ◽  
Threading Dislocations ◽  
Mbe Growth ◽  
Detailed Mechanism ◽  
Si Substrates ◽  
Initial Stage ◽  
Interfacial Defects ◽  
Interfacial Dislocations ◽  
Step Growth ◽  
Essential Problem

Recently, interest has focused on the epitaxy of GaAs on Si as a promising material for electronic applications, potentially for integration of optoelectronic devices on silicon wafers. The essential problem concerns the 4% misfit between the two materials, and this must be accommodated by a network of interfacial dislocations with the lowest number of threading dislocations. It is thus important to understand the detailed mechanism of the formation of this network, in order to eventually reduce the dislocation density at the top of the layers.MOVPE growth is carried out on slightly misoriented, (3.5°) from (001) towards , Si substrates. Here we report on the effect of this misorientation on the interfacial defects, at a very early stage of growth. Only the first stage, of the well-known two step growth process, is thus considered. Previously, we showed that full substrate coverage occured for GaAs thicknesses of 5 nm in contrast to MBE growth, where substantially greater thicknesses are required.

Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices

1987 ◽  
Vol 91 ◽  
Author(s):  
N. El-Masry ◽  
N. Hamaguchi ◽  
J.C.L. Tarn ◽  
N. Karam ◽  
T.P. Humphreys ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Defect Reduction ◽  
Strained Layer ◽  
Si Substrates ◽  
Density Of Dislocations ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTInxGa11-xAs-GaAsl-yPy strained layer superlattice buffer layers have been used to reduce threading dislocations in GaAs grown on Si substrates. However, for an initially high density of dislocations, the strained layer superlattice is not an effective filtering system. Consequently, the emergence of dislocations from the SLS propagate upwards into the GaAs epilayer. However, by employing thermal annealing or rapid thermal annealing, the number of dislocation impinging on the SLS can be significantly reduced. Indeed, this treatment greatly enhances the efficiency and usefulness of the SLS in reducing the number of threading dislocations.

Observation of GaAs/Si Epitaxial Interfaces by Atomic Resolution Electron Microscopy

1986 ◽  
Vol 67 ◽  
Author(s):  
N. Otsuka ◽  
C. Choi ◽  
Y. Nakamura ◽  
S. Nagakura ◽  
R. Fischer ◽  
...  
Keyword(s):  
Substrate Surface ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Si Substrates ◽  
Voltage Electron ◽  
Resolution Electron ◽  
Gaas Films ◽  
Substrate Surfaces

ABSTRACTRecent studies have shown that high quality GaAs films can be grown by MBE on Si substrates whose surfaces are slightly tilted from the (100) plane. In order to investigate the effect of the tilting of substrate surfaces on the formation of threading dislocations, the GaAs/Si epitaxial interfaces have been observed with a 1 MB ultra-high vacuum, high voltage electron microscope. Two types of misfit dislocations, one with Burgers vectors parallel to the interface and the other with Burgers vectors inclined from the interface, were found in these epitaxial interfaces. The observation of crosssectional samples perpendicular to each other has shown that the tilting of the substrate surface directly influences the generation of these two types of misfit dislocations. The mechanism of the reduction of threading dislocations by the tilting of the substrate surface is discussed based on these observations.

Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates

2016 ◽  
Vol 453 ◽  
pp. 180-187 ◽  
Author(s):  
Y. Bogumilowicz ◽  
J.M. Hartmann ◽  
N. Rochat ◽  
A. Salaun ◽  
M. Martin ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Threading Dislocations ◽  
Si Substrates

scholarly journals Evolution of Threading Dislocations in GaN Films Grown on (111) Si Substrates with Various Buffer Layers

2006 ◽  
Vol 12 (S02) ◽  
pp. 906-907
Author(s):  
X Weng ◽  
J Acord ◽  
A Jain ◽  
S Raghavan ◽  
J Redwing ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Threading Dislocations ◽  
Si Substrates

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006

Misfit and Threading Dislocations in GaAs Layers Grown on Si Substrates by MOCVD

1987 ◽  
Vol 26 (Part 2, No. 3) ◽  
pp. L163-L165 ◽  
Author(s):  
Koichi Ishida ◽  
Masahiro Akiyama ◽  
Seiji Nishi
Keyword(s):  
Threading Dislocations ◽  
Si Substrates

MoirÉ Pattern Studies of Thin Layers Deposited on (001)Si Substrates: Cases of Tisi2 and GaAs.

1989 ◽  
Vol 148 ◽  
Author(s):  
A. Rocher ◽  
X. Wallart ◽  
M.N. Charasse
Keyword(s):  
Three Dimensional ◽  
Thin Layers ◽  
Dislocation Network ◽  
Threading Dislocations ◽  
Si Substrates ◽  
Moire Pattern ◽  
Moiré Pattern ◽  
Dimensional Growth ◽  
Residual Strains

ABSTRACTMoiré pattern images have been used to investigate the crystalline quality of thin films deposited on (100)Si substrates. Observations performed on TiSi2 show a three-dimensional growth process and two different epitaxial modes. In the case of GaAs epilayers, it is shown that the residual strains are not uniformly distributed in the layer. Residual strain and threading dislocations are related to imperfections of the misfit dislocation network.

Criterion for blocking threading dislocations by strained buffer layers in GaAs grown on Si substrates

1989 ◽  
Vol 55 (20) ◽  
pp. 2096-2098 ◽  
Author(s):  
N. A. El‐Masry ◽  
J. C. L. Tarn ◽  
S. Hussien
Keyword(s):  
Buffer Layers ◽  
Threading Dislocations ◽  
Si Substrates
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