scholarly journals Carrier relaxation dynamics in defect states of epitaxial GaN/AlN/Si using ultrafast transient absorption spectroscopy

RSC Advances ◽  
2015 ◽  
Vol 5 (102) ◽  
pp. 83969-83975 ◽  
Author(s):  
Palak Dugar ◽  
Mahesh Kumar ◽  
Shibin Krishna T. C. ◽  
Neha Aggarwal ◽  
Govind Gupta

Carrier relaxation dynamics through the defect levels in an epitaxial GaN/AlN/Si have been analysed on the femto–picosecond timescale, using ultrafast-transient absorption spectroscopy.

2021 ◽  
Author(s):  
Ying Liu ◽  
Jianmin Lu ◽  
Qianxiao Zhang ◽  
Yajie Bai ◽  
Xuliang Pang ◽  
...  

Decoration of Ag-ultrathin Ni-MOF onside Cu2O was firstly fabricated. The charge-transfer dynamics at heterostructure was in-depth revealed by ultrafast transient absorption spectroscopy. NH3 yield rate (4.63 μg h-1 cm-2) with...


2016 ◽  
Vol 18 (13) ◽  
pp. 8938-8944 ◽  
Author(s):  
Iulia Minda ◽  
Essraa Ahmed ◽  
Vivien Sleziona ◽  
Christoph Richter ◽  
Max Beu ◽  
...  

Charge transfer dynamics in fully operational dye sensitised solar cells as observed using ultrafast transient absorption spectroscopy.


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