Carrier relaxation dynamics in defect states of epitaxial GaN/AlN/Si using ultrafast transient absorption spectroscopy
Keyword(s):
Carrier relaxation dynamics through the defect levels in an epitaxial GaN/AlN/Si have been analysed on the femto–picosecond timescale, using ultrafast-transient absorption spectroscopy.
2019 ◽
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Vol 428
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