Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN

1998 ◽  
Vol 73 (17) ◽  
pp. 2405-2407 ◽  
Author(s):  
J. C. Carrano ◽  
T. Li ◽  
D. L. Brown ◽  
P. A. Grudowski ◽  
C. J. Eiting ◽  
...  
Keyword(s):  
High Speed ◽  
Metal Semiconductor Metal ◽  
Ultraviolet Photodetectors ◽  
Very High

Very high speed GaInAs metal‐semiconductor‐metal photodiode incorporating an AlInAs/GaInAs graded superlattice

1989 ◽  
Vol 54 (1) ◽  
pp. 16-17 ◽  
Author(s):  
O. Wada ◽  
H. Nobuhara ◽  
H. Hamaguchi ◽  
T. Mikawa ◽  
A. Tackeuchi ◽  
...  
Keyword(s):  
High Speed ◽  
Metal Semiconductor Metal ◽  
Very High

High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN

1999 ◽  
Vol 74 (5) ◽  
pp. 762-764 ◽  
Author(s):  
D. Walker ◽  
E. Monroy ◽  
P. Kung ◽  
J. Wu ◽  
M. Hamilton ◽  
...  
Keyword(s):  
High Speed ◽  
Low Noise ◽  
Metal Semiconductor Metal ◽  
Ultraviolet Photodetectors

Very high-speed ultraviolet photodetectors fabricated on GaN

1999 ◽  
Vol 28 (3) ◽  
pp. 325-333 ◽  
Author(s):  
J. C. Carrano ◽  
T. Li ◽  
C. J. Eiting ◽  
R. D. Dupuis ◽  
J. C. Campbell
Keyword(s):  
High Speed ◽  
Ultraviolet Photodetectors ◽  
Very High

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

YSS HAP72

Alloy Digest ◽  
2019 ◽  
Vol 68 (10) ◽  
Keyword(s):  
Wear Resistance ◽  
High Temperature ◽  
Powder Metallurgy ◽  
Tool Steel ◽  
High Speed ◽  
High Wear Resistance ◽  
Bend Strength ◽  
Temperature Performance ◽  
Very High

Abstract YSS HAP72 is a powder metallurgy high-speed tool steel with a very high wear resistance. This datasheet provides information on composition, hardness, and bend strength. It also includes information on high temperature performance. Filing Code: TS-779. Producer or source: Hitachi Metals America Ltd.

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