Surface, stress, and impurity effects on room-temperature migration of ion-beam-generated point defects

1998 ◽  
Vol 73 (11) ◽  
pp. 1571-1573 ◽  
Author(s):  
S. Coffa ◽  
A. La Magna ◽  
V. Privitera ◽  
G. Mannino
Keyword(s):  
Point Defects ◽  
Surface Stress ◽  
Room Temperature ◽  
Ion Beam ◽  
Impurity Effects

Ion Beam Injected Point Defects in Crystalline Silicon: Migration, Interaction and Trapping Phenomena

1996 ◽  
Vol 438 ◽  
Author(s):  
F. Priolo ◽  
V. Privitera ◽  
S. Coffa ◽  
S. Libertino
Keyword(s):  
Diffusion Coefficient ◽  
Long Range ◽  
Point Defects ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Temperature Diffusion ◽  
Range Migration ◽  
Limited Diffusion ◽  
Vacancy Type Defect

AbstractOur recent work on the room temperature migration and trapping phenomena of ion beam generated point defects in crystalline Si is reviewed. It is shown that a small fraction (∼ 10−6) of the defects generated at the surface by a shallow implant is injected into the bulk. These defects undergo a long range trap-limited diffusion and interact with both impurities, dopants and preexisting defects along their path. In particular, these interactions result in dopant deactivation and/or partial annihilation of pre-existing vacancy-type defect markers. It is found that in highly pure, epitaxial Si layers, these effects extend to several microns from the surface, demonstrating a long range migration of point defects at room temperature. By a detailed analysis of the experimental evidences we have identified the Si self-interstitials as the major responsible for the observed phenomena. This allowed us to give a lower limit of 6×10−11-cm2/s for the room temperature diffusion coefficient of the Si self-interstitials. Room temperature trap-limited migration of vacancies is also detected as a broadening in the divacancy profile of as implanted samples. In this case the room temperature diffusion coefficient of vacancies has been found to be ≥3 × 10−12 cm 2/s. These data are presented and their implications discussed.

14N NQR Studies of Impurity Effects on the Local Structure of NaNO2 -based Mixed Systems

2000 ◽  
Vol 55 (1-2) ◽  
pp. 219-224 ◽  
Author(s):  
S. K. Song ◽  
Y. M. Park ◽  
J. K. Jung ◽  
Y. M. Seo ◽  
S. H. Choh
Keyword(s):  
Point Defects ◽  
Room Temperature ◽  
Random Distribution ◽  
Impurity Effects ◽  
Fast Motion ◽  
Local Disorder ◽  
Mixed Systems ◽  
Low Symmetry ◽  
Influence Of Impurities

The influence of impurities on the 14N NQR lineshape of Na1-xAgxNO2 and [NaNO2]1-x-[BNO3]x (B = Na, K) at room temperature has been investigated. Carrying out spectral analysis in conjunction with classification of the local field inhomogeneities according to the structurally isomorphic, Na1-xAgxNO2 , and anisomorphic [NaNO2]1-x[BNO3]x systems, enabled an under-standing of the microscopic nature of impurity-induced local disorder. The iso-and anisomorphic systems reveal their own unique features of the impurity induced local disorder. They are charac-terized by a static, random distribution of impurities in the isomorphic system and a fast motion of the impurity-induced mobile point defects in the anisomorphic system. However, for both systems, neither a change of the 14N NQR frequency nor a multisplitting of the lines is observed because of the relatively low symmetry.

Room temperature migration of ion beam injected point defects in crystalline silicon

1996 ◽  
Vol 120 (1-4) ◽  
pp. 9-13 ◽  
Author(s):  
Vittorio Privitera ◽  
Salvatore Coffa ◽  
Francesco Priolo ◽  
Kim Kyllesbech Larsen ◽  
Sebania Libertino ◽  
...  
Keyword(s):  
Point Defects ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Ion Beam

Ion Beam Injected Point Defects in Crystalline Silicon: Migration, Interaction and Trapping Phenomena

1996 ◽  
Vol 439 ◽  
Author(s):  
F. Priolo ◽  
V. Privitera ◽  
S. Coffa ◽  
S. Libertino
Keyword(s):  
Diffusion Coefficient ◽  
Long Range ◽  
Point Defects ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Temperature Diffusion ◽  
Range Migration ◽  
Limited Diffusion ◽  
Vacancy Type Defect

AbstractOur recent work on the room temperature migration and trapping phenomena of ion beam generated point defects in crystalline Si is reviewed. It is shown that a small fraction (˜10−6) of the defects generated at the surface by a shallow implant is injected into the bulk. These defects undergo a long range trap-limited diffusion and interact with both impurities, dopants and preexisting defects along their path. In particular, these interactions result in dopant deactivation and/or partial annihilation of pre-existing vacancy-type defect markers. It is found that in highly pure, epitaxial Si layers, these effects extend to several microns from the surface, demonstrating a long range migration of point defects at room temperature. By a detailed analysis of the experimental evidences we have identified the Si self-interstitials as the major responsible for the observed phenomena. This allowed us to give a lower limit of 6 × 10−11 cm2/s for the room temperature diffusion coefficient of the Si self-interstitials. Room temperature trap-limited migration of vacancies is also detected as a broadening in the divacancy profile of as implanted samples. In this case the room temperature diffusion coefficient of vacancies has been found to be ≥3 × 10−12 cm2/s. These data are presented and their implications discussed.

Temperature Dependence of Ion-Beam-Induced In-Plane Stress in Silicon

1992 ◽  
Vol 268 ◽  
Author(s):  
J. Z. Yuan ◽  
R. Hartmann ◽  
I. V. Verner ◽  
J. W. Corbett
Keyword(s):  
Temperature Dependence ◽  
Temperature Effect ◽  
Plane Stress ◽  
Surface Stress ◽  
Room Temperature ◽  
Ion Beam ◽  
High Sensitivity ◽  
Influence Of Temperature ◽  
Induced Stress ◽  
Influence Of Temperature On

ABSTRACTExperiments were conducted to determine the sample temperature dependence of ion-beaminduced in-plane stress in silicon. Implantations were carried out for B+, Ar+ and Ti+ at various dose ranges and different silicon temperatures. The ion-beam-induced surface stress was measured by using a newly developed technique, which has a high sensitivity. A large abnormal stress was observed for B+ implantation at room temperature. The results show that the silicon temperature has a significant effect on the ion-beam-induced stress. The influence of temperature on stress curves were presented. This effect is consistent with the temperature effect on the ionbeam-induced amorphization of silicon. However, the effect on chemically active ions, such as B+, is significant, indicating that some preferable temperature can be used for minimizing ionimplantation-induced stress.

Point Defects Migration and Agglomeration in Si at Room Temperature: The Role of Surface and Impurity Content

1997 ◽  
Vol 469 ◽  
Author(s):  
V. Privitera ◽  
S. Coffa ◽  
K. Kyllesbech Larsen ◽  
S. Libertino ◽  
G. Mannino ◽  
...  
Keyword(s):  
Point Defects ◽  
Room Temperature ◽  
Deep Level ◽  
Ion Beam ◽  
Impurity Content ◽  
Sample Surface ◽  
Defect Migration ◽  
Transient Spectroscopy ◽  
Dopant Atoms

ABSTRACTOur recent work on the room temperature migration and trapping phenomena of self-interstitials and vacancies in crystalline Si is reviewed. Spreading resistance profiling and deep level transient spectroscopy measurements were used to monitor the interaction of ion beam generated defects with dopant atoms, intrinsic impurities (i.e. O and C), pre-existing defect marker layers and sample surface. We have found that both interstitials and vacancies undergo fast long range migration which is interrupted by trapping at impurities and by recombination at defects or at the surface. Effective defect migration lengths as large as 5 μm at room temperature have been observed in highly pure, defect free epitaxial Si samples. A lower limit of 1×10−10 cm2/sec for the room temperature diffusivity of self-interstitials has been determined. Furthermore, by monitoring the migration and interaction processes of point defects injected through a mask, we have established that surface acts as an effective sink for the migrating Si self interstitials.

Nanocomposite Polyurethane Foams Via POSS Blends

2002 ◽  
Vol 733 ◽  
Author(s):  
Brock McCabe ◽  
Steven Nutt ◽  
Brent Viers ◽  
Tim Haddad
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Polyurethane Foams ◽  
Development Projects ◽  
Polymer Systems ◽  
Polyurethane Resin ◽  
Military Development

AbstractPolyhedral Oligomeric Silsequioxane molecules have been incorporated into a commercial polyurethane formulation to produce nanocomposite polyurethane foam. This tiny POSS silica molecule has been used successfully to enhance the performance of polymer systems using co-polymerization and blend strategies. In our investigation, we chose a high-temperature MDI Polyurethane resin foam currently used in military development projects. For the nanofiller, or “blend”, Cp7T7(OH)3 POSS was chosen. Structural characterization was accomplished by TEM and SEM to determine POSS dispersion and cell morphology, respectively. Thermal behavior was investigated by TGA. Two methods of TEM sample preparation were employed, Focused Ion Beam and Ultramicrotomy (room temperature).

Compression of Single-Crystal Micropillars of the Γ Intermetallic Phase in the Fe-Zn System

2014 ◽  
Vol 922 ◽  
pp. 264-269 ◽  
Author(s):  
Masahiro Inomoto ◽  
Norihiko L. Okamoto ◽  
Haruyuki Inui
Keyword(s):  
Single Crystal ◽  
Deformation Behavior ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Intermetallic Phase ◽  
Gamma Phase ◽  
Compression Tests ◽  
Slip Direction ◽  
Beam Method

The deformation behavior of the Γ (gamma) phase in the Fe-Zn system has been investigated via room-temperature compression tests of single-crystal micropillar specimens fabricated by the focused ion beam method. Trace analysis of slip lines indicates that {110} slip occurs for the specimens investigated in the present study. Although the slip direction has not been uniquely determined, the slip direction might be <111> in consideration of the crystal structure of the Γ phase (bcc).

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