Anisotropic misfit dislocation nucleation in two-dimensional grown InAs/GaAs(001) heterostructures

1998 ◽  
Vol 73 (8) ◽  
pp. 1074-1076 ◽  
Author(s):  
Achim Trampert ◽  
Klaus H. Ploog ◽  
Eric Tournié
Keyword(s):  
Misfit Dislocation ◽  
Dislocation Nucleation ◽  
Two Dimensional

Rapid Thermal Processing of Buried Sil−xGex Strained Layers; Photoluminescence Decay and Misfit Dislocation Generation.

1990 ◽  
Vol 198 ◽  
Author(s):  
D.C. Houghton ◽  
N.L. Rowell
Keyword(s):  
Quantum Wells ◽  
Misfit Dislocation ◽  
Thermal Processing ◽  
Internal Quantum Efficiency ◽  
Dislocation Nucleation ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Dislocation Generation ◽  
Strained Layers ◽  
Wide Range

ABSTRACTThe thermal constraints for device processing imposed by strain relaxation have been determined for a wide range of Si-Ge strained heterostructures. Misfit dislocation densities and glide velocities in uncapped Sil-xGex alloy layers, Sil-xGex single and multiple quantum wells have been measured using defect etching and TEM for a range of anneal temperatures (450°C-1000°C) and anneal times (5s-2000s). The decay of an intense photoluminescence peak (∼ 10% internal quantum efficiency ) from buried Si1-xGex strained layers has been correlated with the generation of misfit dislocations in adjacent Sil-xGex /Si interfaces. The misfit dislocation nucleation rate and glide velocity for all geometries and alloy compositions (0<x<0.25) were found to be thermally activated processes with activation energies of (2.5±0.2)eV and (2.3-0.65x)eV, respectively. The time-temperature regime available for thermal processing is mapped out as a function of dislocation density using a new kinetic model.

Interaction Between Dislocations and Misfit Interface

2000 ◽  
Vol 634 ◽  
Author(s):  
A. Kuronen ◽  
K. Kaski ◽  
L. F. Perondi ◽  
J. Rintala
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Misfit Dislocation ◽  
Driving Force ◽  
Two Dimensional ◽  
Lennard Jones ◽  
Dynamics Simulations ◽  
Nucleation Of Dislocations

ABSTRACTMechanisms responsible for the formation of a misfit dislocation in a lattice-mismatched system have been studied using Molecular Dynamics simulations of a two-dimensional Lennard-Jones system. Results show clearly how the strain due to the lattice-mismatched interface acts as a driving force for migration of dislocations in the substrate and the overlayer and nucleation of dislocations in the overlayer edges. Moreover, we observe dislocation reactions in which the gliding planes of dislocations change such that they can migrate to the interface.

Calculation of Equilibrium Island Morphologies for Strained Epitaxial Systems

1996 ◽  
Vol 436 ◽  
Author(s):  
R. V. Kukta ◽  
L. B. Freund
Keyword(s):  
Free Energy ◽  
Stress Distribution ◽  
Aspect Ratio ◽  
Misfit Dislocation ◽  
Chemical Potential ◽  
Equilibrium Shape ◽  
Two Dimensional ◽  
Surface Chemical ◽  
Thick Substrate ◽  
Lower Height

AbstractStrained islands grown coherently on a relatively thick substrate with similar elastic properties are considered within the framework of continuum mechanics. The condition of uniform surface chemical potential is imposed to calculate two-dimensional equilibrium island shapes. The stress distribution in the equilibrium islands is shown to be highly nonhomogeneous. The effects of introducing a single misfit dislocation at the island-substrate interface are considered. It is found that there is critical island volume above which a dislocation decreases the total free energy of the system. The dislocation alters the stress distribution in the island, causing the island to relax via mass transport to an equilibrium shape with a lower height-to-width aspect ratio and a smaller surface chemical potential than the island prior to the introduction of the dislocation.

Misfit Dislocation Nucleation Study in p/p[sup +] Silicon

2001 ◽  
Vol 148 (7) ◽  
pp. G379 ◽  
Author(s):  
Petra Feichtinger ◽  
Mark S. Goorsky ◽  
Dwain Oster ◽  
Tom D’Silva ◽  
Jim Moreland
Keyword(s):  
Misfit Dislocation ◽  
Dislocation Nucleation
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