Confocal Raman spectroscopic observation of hexagonal diamond formation from dissolved carbon in nickel under chemical vapor deposition conditions

1998 ◽  
Vol 73 (6) ◽  
pp. 765-767 ◽  
Author(s):  
Mikka Nishitani-Gamo ◽  
Isao Sakaguchi ◽  
Kian Ping Loh ◽  
Hisao Kanda ◽  
Toshihiro Ando
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Spectroscopic Observation ◽  
Diamond Formation ◽  
Raman Spectroscopic ◽  
Dissolved Carbon ◽  
Hexagonal Diamond ◽  
Confocal Raman ◽  
Deposition Conditions

Properties and Production Mechanism of Low-Temperature Deposited CAT-CVD Poly-Silicon films

1992 ◽  
Vol 283 ◽  
Author(s):  
Hideki Matsumura ◽  
Yoichi Hosoda ◽  
Seijiro Furukawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Pressure ◽  
Silicon Films ◽  
Production Mechanism ◽  
Cvd Method ◽  
Poly Silicon ◽  
Deposition Conditions

ABSTRACTPoly-silicon films are obtained at temperatures as low as 400 °C by the catalytic chemical vapor deposition (cat-CVD) method, in which deposition gases are decomposed by the catalytic or pyrolytic reactions with a heated catalyzer near substrates. It is found that there are roughly two modes of deposition conditions such as low gas pressure mode and high gas pressure mode for obtaining poly-silicon films, and also that the Hall mobility of the cat-CVD poly-silicon films of low gas pressure mode sometimes exceeds over 100 cm2/Vs.

Metastable nanosized diamond formation from a C-H-O fluid system

2010 ◽  
Vol 25 (12) ◽  
pp. 2336-2340 ◽  
Author(s):  
S.K. Simakov
Keyword(s):  
Experimental Data ◽  
Chemical Vapor Deposition ◽  
Synthesis Gas ◽  
Vapor Deposition ◽  
Present Model ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Diamond Synthesis ◽  
Diamond Formation ◽  
Fluid System

The model of nanosized diamond particles formation at metastable P-T parameters from a C-H-O fluid system is presented. It explains the hydrothermal formation and growth of diamond and the specifics of chemical vapor deposition (CVD) diamond synthesis gas mixtures at low P-T parameters. Further, the model explains the genesis of interstellar nanodiamond formations in space and the genesis of metamorphic microdiamonds in shallow depth Earth rocks. In contrast to models where many possible reactions are considered, the present model makes the simplest possible assumptions about the key processes, and is then able to account for various tendencies seen in experimental data.

scholarly journals Chemical Vapor Deposition of IrTe2 Thin Films

Crystals ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 575
Author(s):  
Rui Zhou ◽  
Zhaoyang Zhao ◽  
Juanxia Wu ◽  
Liming Xie
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Spectroscopic Characterization ◽  
Electrical Measurement ◽  
Charge Ordering ◽  
Temperature Dependent ◽  
Raman Spectroscopic

Two-dimensional (2D) IrTe2 has a profound charge ordering and superconducting state, which is related to its thickness and doping. Here, we report the chemical vapor deposition (CVD) of IrTe2 films using different Ir precursors on different substrates. The Ir(acac)3 precursor and hexagonal boron nitride (h-BN) substrate is found to yield a higher quality of polycrystalline IrTe2 films. Temperature-dependent Raman spectroscopic characterization has shown the q1/8 phase to HT phase at ~250 K in the as-grown IrTe2 films on h-BN. Electrical measurement has shown the HT phase to q1/5 phase at around 220 K.

Photoluminescent Properties of ZnO Layers Prepared by Organometallic Chemical Vapor Deposition

1987 ◽  
Vol 102 ◽  
Author(s):  
S. Bethke ◽  
H-C Pan ◽  
B. W. Wessels
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Deep Level ◽  
Chemical Vapor ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Emission ◽  
Deposition Conditions ◽  
Organometallic Chemical Vapor Deposition

ABSTRACTZnO layers have been heteroepitaxially deposited on sapphire using organometallic chemical vapor deposition at atmospheric pressure. The quality of the layers was assessed using photoluminescence spectroscopy at 16K. The layers exhibited strong ultraviolet near bandedge luminescence. The dependence of near bandedge and deep level photoluminescence emission on deposition conditions was examined.

Plasma-Assisted Chemical Vapor Deposition of Ceramic Films and Coatings

1989 ◽  
Vol 155 ◽  
Author(s):  
Robert F. Davis
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Microwave Frequencies ◽  
Ceramic Films ◽  
Crystalline Films ◽  
Gas Molecules ◽  
Deposition Conditions

ABSTRACTPlasma-assisted chemical vapor deposition uses energetic electrons to decompose reactant gas molecules into more simple and more highly reactant species to achieve deposition of amorphous and crystalline films and coatings at reduced temperatures. The basis of this technique, as well as the deposition conditions and properties of several ceramic films including Al2O3, TiO2, ZnO, AN, BN, TiN, SiC, Si, GaAs, SiC, C (diamond) and GaN, are briefly described. Modifications of the classical immersed method, including remote plasmas, the use of microwave frequencies and electron cyclotron resonance techniques, are also described with material examples.

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