Floating low-temperature radio-frequency plasma oxidation of polycrystalline silicon-germanium

1998 ◽  
Vol 73 (3) ◽  
pp. 360-362 ◽  
Author(s):  
Zhineng Fan ◽  
Gang Zhao ◽  
Paul K. Chu ◽  
Zhonghe Jin ◽  
Hoi S. Kwok ◽  
...  
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Radio Frequency Plasma ◽  
Plasma Oxidation ◽  
Frequency Plasma

Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE

2001 ◽  
Vol 693 ◽  
Author(s):  
Tomohiro Yamaguchi ◽  
Yoshiki Saito ◽  
Kenji Kano ◽  
Tomo Muramatsu ◽  
Tsutomu Araki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Radio Frequency Plasma ◽  
Single Crystalline ◽  
Nitridation Process ◽  
Frequency Plasma ◽  
Step Growth

AbstractInN films were grown on sapphire (0001) substrates by radio-frequency plasma-assisted molecular beam epitaxy. The InN buffer layers deposited at low temperature were either grown on a substrate with nitridation or on a substrate without nitridation. The InN buffer layers on the nitridated substrates were always single crystalline, whereas the buffer layers on non-nitridated substrates were always polycrystalline. However, even without nitridation process, single crystalline InN films could be grown on the polycrystalline InN buffer layers; in this case, the orientation was always [1120] InN//[1120] sapphire epitaxy, which differed from the [1010] InN//[1120] sapphire epitaxy in films grown with nitridation.

Effective bacterial inactivation using low temperature radio frequency plasma

2010 ◽  
Vol 396 (1-2) ◽  
pp. 17-22 ◽  
Author(s):  
A. Sureshkumar ◽  
R. Sankar ◽  
Mahitosh Mandal ◽  
Sudarsan Neogi
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
Radio Frequency Plasma ◽  
Bacterial Inactivation ◽  
Frequency Plasma
Sign in / Sign up

Export Citation Format

Share Document