The effect of surface segregation on the light-emission intensity of Si/SiGe/Si heterostructures

1998 ◽  
Vol 73 (2) ◽  
pp. 232-234 ◽  
Author(s):  
Yoshinobu Kimura ◽  
Kiyokazu Nakagawa ◽  
Masanobu Miyao
Keyword(s):  
Emission Intensity ◽  
Surface Segregation ◽  
Light Emission ◽  
Light Emission Intensity ◽  
Effect Of Surface

Combinatorial approach toward optimization of the light emission intensity of AlOxNy:Yb3+ thin films

2019 ◽  
Vol 58 (12) ◽  
pp. 3097 ◽  
Author(s):  
K. Y. Tucto ◽  
W. Aponte ◽  
J. A. Dulanto ◽  
J. A. Töfflinger ◽  
J. A. Guerra ◽  
...  
Keyword(s):  
Thin Films ◽  
Emission Intensity ◽  
Light Emission ◽  
Combinatorial Approach ◽  
Light Emission Intensity

An Automated Procedure for the Sensitive and Specific Determination of ATP

1969 ◽  
Vol 15 (1) ◽  
pp. 3-14 ◽  
Author(s):  
K Van Dyke ◽  
R Stitzel ◽  
T McClellan ◽  
C Szustkiewicz
Keyword(s):  
Emission Intensity ◽  
Light Emission ◽  
Reading Error ◽  
Specific Determination ◽  
Run Up ◽  
Light Emission Intensity

Abstract An automated procedure is described for the measurement of ATP. This method, based on the linear luminescence response of firefly extracts added to ATP, is rapid, reproducible, and allows a relatively large number of samples to be run (up to 35/hr.). A procedure is also given for the preparation of the luciferin-luciferase system from dried firefly lanterns. Sample volumes required are small, and reading error is about ± 3%. Uniform timing of the addition of reagents and reading of light emission intensity for each sample are insured. Variables investigated include dilution of firefly extract, alterations in time after mixing sample and enzyme, linearity, cation, anion, and ADP and AMP interference.

scholarly journals Microwave-assisted modulation of light emission intensity in alkali-pyrotechnic plumes

2021 ◽  
Vol 225 ◽  
pp. 406-416
Author(s):  
Stuart J. Barkley ◽  
Joel E. Lynch ◽  
Eric J. Miklaszewski ◽  
Jonathan M. Dilger ◽  
William F. Crespo ◽  
...  
Keyword(s):  
Emission Intensity ◽  
Light Emission ◽  
Microwave Assisted ◽  
Light Emission Intensity

scholarly journals The Luminescence Properties and Energy Transfer from Ce3+to Pr3+for YAG:Ce3+Pr3+Phosphors

2015 ◽  
Vol 2015 ◽  
pp. 1-8
Author(s):  
Rongfeng Guan ◽  
Liu Cao ◽  
Yajun You ◽  
Yuebin Cao
Keyword(s):  
Energy Transfer ◽  
Emission Intensity ◽  
Electronic Excitation ◽  
Light Emission ◽  
Red Light ◽  
Luminescent Properties ◽  
Concentration Increase ◽  
Transfer Phenomenon ◽  
Colour Rendering ◽  
Light Emission Intensity

Y2.94−xAl5O12(YAG):Ce0.06Prxphosphors with various Pr3+concentrations (x=0, 0.006, 0.01, 0.03, 0.06, and 0.09) were synthesized by using a coprecipitation method. The phases, luminescent properties, and energy transfer phenomenon from Ce3+to Pr3+were investigated. The results indicated that the doping of Pr3+  (x≤0.09)did not produce any new phases but caused a slight lattice parameters increase. After Pr3+doping, the YAG:CePr phosphor emits red light at 610 nm, which was regarded helpful for improving the colour rendering index of the phosphor. With Pr3+concentration increase from 0.006 to 0.01 mol, the intensity of red light emission increased slightly; further increasing Pr3+concentration from 0.01 to 0.09, the red light emission intensity decreased gradually. Excitation at 340, and 460 nm could not lead to the direct electronic excitation of Pr3+ions; however, when YAG:CePr was excited at 340 nm a red light emission at 610 nm appeared, which implied the energy transfer phenomenon from Ce3+to Pr3+.

scholarly journals GaP Homojunction LEDs Fabricated by Dressed-Photon-Phonon-Assisted Annealing

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Jun Hyoung Kim ◽  
Tadashi Kawazoe ◽  
Motoichi Ohtsu
Keyword(s):  
Single Crystal ◽  
Photon Energy ◽  
Energy Band ◽  
Emission Intensity ◽  
Light Emission ◽  
Forward Bias ◽  
Bias Current ◽  
Bandgap Energy ◽  
Light Emission Intensity

By using a homojunction-structured GaP single crystal, we generated a photon energy higher than the bandgap energy (2.26 eV). The device was fabricated by performing dressed-photon-phonon- (DPP-) assisted annealing, while applying a forward-bias current, on a p-n homojunction structure formed by implanting a dopant (Zn) into an n-type GaP substrate. The DPP-assisted annealing increased the light emission intensity in an energy band above 2.32 eV by at least 550% compared with that before annealing.

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