Edge detection readout signal and cross talk in phase-change optical data storage

1998 ◽  
Vol 72 (26) ◽  
pp. 3422-3424 ◽  
Author(s):  
Chubing Peng ◽  
M. Mansuripur ◽  
K. Nagata
Keyword(s):  
Edge Detection ◽  
Phase Change ◽  
Data Storage ◽  
Cross Talk ◽  
Optical Data Storage ◽  
Optical Data ◽  
Readout Signal

Edge detection in phase-change optical data storage

1997 ◽  
Vol 71 (15) ◽  
pp. 2088-2090 ◽  
Author(s):  
Chubing Peng ◽  
M. Mansuripur ◽  
W. M. Kim ◽  
S. G. Kim
Keyword(s):  
Edge Detection ◽  
Phase Change ◽  
Data Storage ◽  
Optical Data Storage ◽  
Optical Data

A Novel Approach to Obtain GeSbTe-Based High Speed Crystallizing Materials for Phase Change Optical Recording

2001 ◽  
Vol 674 ◽  
Author(s):  
Tae-Yon Lee ◽  
Byung-ki Cheong ◽  
Taek Sung Lee ◽  
Sung Jin Park ◽  
Won Mok Kim ◽  
...  
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
High Speed ◽  
Preliminary Test ◽  
Optical Data Storage ◽  
Optical Recording ◽  
Optical Data ◽  
Recording Layer ◽  
Novel Approach ◽  
Vegard’S Law

ABSTRACTA new approach is proposed to obtain fast crystallizing materials based on a conventional GeSbTe alloy for rewritable phase change optical data storage. By means of co-sputtering, Ge1Sb2Te4alloy was mixed with Sn1Bi2Te4alloy so as to form pseudo-binary alloys (Ge1Sb2Te4)1-x(Sn1Bi2Te4)x (x is a mole fraction). From structural and optical analyses of the co- sputtered and annealed alloy films, the formation of stable crystalline single phases was observed along with a Vegard's law behavior, suggesting a homogeneous mixing of the two alloys. By use of a 4 layered disk with (Ge1Sb2Te4)0.85(Sn1Bi2Te4)0.15 recording layer, a preliminary test of writing and erasing was carried out and the results were compared with the case of the disk with Ge1Sb2Te4recording layer. The (Ge1Sb2Te4)0.85(Sn1Bi2Te4)0.15 recording layer was found to yield markedly higher erasibility, especially with increasing disk linear velocity.

Understanding the Electro-thermal and Phase-transformation Processes in Phase-change Materials for Data Storage Applications

2003 ◽  
Vol 803 ◽  
Author(s):  
C. D. Wright ◽  
M. Armand ◽  
M. M. Aziz ◽  
S. Senkader ◽  
W. Yu
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Materials ◽  
Random Access ◽  
Optical Data Storage ◽  
Operating Conditions ◽  
Optical Data ◽  
Probe Type ◽  
Practical Utilization ◽  
Transformation Processes

ABSTRACTAttempts at the practical utilization of Sb-Te based alloys beyond optical data storage have been made recently by employing these materials in both scanning probe type memories, and in electrical memory devices - namely Phase-Change Random Access Memory (PC-RAM). We have developed models to simulate the electrical, thermal, and phase-change characteristics of this important class of material. In this paper we describe the physical basis of our models and present simulation results for different memory configurations and operating conditions.

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