Edge detection in phase-change optical data storage

1997 ◽  
Vol 71 (15) ◽  
pp. 2088-2090 ◽  
Author(s):  
Chubing Peng ◽  
M. Mansuripur ◽  
W. M. Kim ◽  
S. G. Kim
Keyword(s):  
Edge Detection ◽  
Phase Change ◽  
Data Storage ◽  
Optical Data Storage ◽  
Optical Data

Edge detection readout signal and cross talk in phase-change optical data storage

1998 ◽  
Vol 72 (26) ◽  
pp. 3422-3424 ◽  
Author(s):  
Chubing Peng ◽  
M. Mansuripur ◽  
K. Nagata
Keyword(s):  
Edge Detection ◽  
Phase Change ◽  
Data Storage ◽  
Cross Talk ◽  
Optical Data Storage ◽  
Optical Data ◽  
Readout Signal

A Novel Approach to Obtain GeSbTe-Based High Speed Crystallizing Materials for Phase Change Optical Recording

2001 ◽  
Vol 674 ◽  
Author(s):  
Tae-Yon Lee ◽  
Byung-ki Cheong ◽  
Taek Sung Lee ◽  
Sung Jin Park ◽  
Won Mok Kim ◽  
...  
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
High Speed ◽  
Preliminary Test ◽  
Optical Data Storage ◽  
Optical Recording ◽  
Optical Data ◽  
Recording Layer ◽  
Novel Approach ◽  
Vegard’S Law

ABSTRACTA new approach is proposed to obtain fast crystallizing materials based on a conventional GeSbTe alloy for rewritable phase change optical data storage. By means of co-sputtering, Ge1Sb2Te4alloy was mixed with Sn1Bi2Te4alloy so as to form pseudo-binary alloys (Ge1Sb2Te4)1-x(Sn1Bi2Te4)x (x is a mole fraction). From structural and optical analyses of the co- sputtered and annealed alloy films, the formation of stable crystalline single phases was observed along with a Vegard's law behavior, suggesting a homogeneous mixing of the two alloys. By use of a 4 layered disk with (Ge1Sb2Te4)0.85(Sn1Bi2Te4)0.15 recording layer, a preliminary test of writing and erasing was carried out and the results were compared with the case of the disk with Ge1Sb2Te4recording layer. The (Ge1Sb2Te4)0.85(Sn1Bi2Te4)0.15 recording layer was found to yield markedly higher erasibility, especially with increasing disk linear velocity.

Understanding the Electro-thermal and Phase-transformation Processes in Phase-change Materials for Data Storage Applications

2003 ◽  
Vol 803 ◽  
Author(s):  
C. D. Wright ◽  
M. Armand ◽  
M. M. Aziz ◽  
S. Senkader ◽  
W. Yu
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Materials ◽  
Random Access ◽  
Optical Data Storage ◽  
Operating Conditions ◽  
Optical Data ◽  
Probe Type ◽  
Practical Utilization ◽  
Transformation Processes

ABSTRACTAttempts at the practical utilization of Sb-Te based alloys beyond optical data storage have been made recently by employing these materials in both scanning probe type memories, and in electrical memory devices - namely Phase-Change Random Access Memory (PC-RAM). We have developed models to simulate the electrical, thermal, and phase-change characteristics of this important class of material. In this paper we describe the physical basis of our models and present simulation results for different memory configurations and operating conditions.

The Patterned Optical Phase Change Recording Media

2005 ◽  
Author(s):  
Evan Small ◽  
Sadegh M. Sadeghipour ◽  
Mehdi Asheghi
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Numerical Aperture ◽  
Data Access ◽  
Optical Microscope ◽  
Optical Data Storage ◽  
High Density ◽  
Optical Data ◽  
Optical Phase ◽  
Storage Devices

Demands for the high storage capacities and rates of data transfer have been overwhelming in the recent years. With the increasing use of multimedia, the rewritable optical phase-change disks, e.g. CD and DVD, have become more popular. The optical PC data storage devices provide relatively short data access rates (∼ 10 MHz) and moderate areal densities. As in other areas of data storage, there has been tremendous demand and pressure, driven by consumer application, for inexpensive high-density PC systems. So far, the optical data storage industry has managed to meet the demands by using lasers with shorter wavelengths and objective lenses with higher numerical aperture (NA). Several strategies such as “multilevel storage layers” [1] and “mark radial width modulation” [2] have been proposed for the next generation of the high-density PC data storage devices. There have been advances in near field optical techniques to increase density (40 Gb/in) using solid immersion lens [3]. Hosaka et al. [4] demonstrated 60 nm domains in phase change media that translates to 170 Gb/in2 using a scanning near-filed optical microscope. Kado and Tohda [5] used an atomic force microscope (AFM) to locally modify the electrical property (×100) of a PC material by applying an electrical pulse between the probe and media. They achieved an areal density near 1 Tbits/cm2.

Copper vanadates as candidate materials for phase change optical memory

1992 ◽  
Vol 7 (3) ◽  
pp. 741-744 ◽  
Author(s):  
D.P. Birnie ◽  
J.D. Weinberg ◽  
D.G. Swanson
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Data Storage ◽  
Optical Memory ◽  
Optical Data Storage ◽  
Optical Data ◽  
Storage Devices ◽  
Phase Development ◽  
Successful Phase ◽  
Oxide Melts

Several copper vanadium oxide melts were tested for possible application as the active medium in phase-change optical data storage devices. These materials were melted in the bulk and then quenched. Their phase development was characterized to help determine their applicability to optical data storage. It was found that they satisfy many of the criteria necessary for successful phase-change data storage; further studies of their behavior in thin film geometry would be warranted.

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