Ordering effect on band-gap lowering in lattice-matched InAlAs epilayers grown on InP by metal–organic chemical-vapor deposition

1998 ◽  
Vol 72 (15) ◽  
pp. 1905-1907 ◽  
Author(s):  
W. S. Han ◽  
B. Lee ◽  
J. H. Baek ◽  
J.-H. Lee ◽  
B. S. Jung ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Lattice Matched

Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition

2010 ◽  
Vol 97 (11) ◽  
pp. 112105 ◽  
Author(s):  
Hua Tong ◽  
Jing Zhang ◽  
Guangyu Liu ◽  
Juan A. Herbsommer ◽  
G. S. Huang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermoelectric Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Lattice Matched

Structural, Electrical and Optical Properties of Ternary Al2xIn2(1-x)O3 Films Prepared by Metal Organic Chemical Vapor Deposition

2017 ◽  
Vol 898 ◽  
pp. 1796-1803
Author(s):  
Xue Jian Du ◽  
Xian Jin Feng ◽  
Wei Guang Wang ◽  
Cai Na Luan ◽  
Jin Ma
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Electrical And Optical Properties ◽  
Al Content ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

New wide band gap semiconductors with tunable properties are desperately needed to meet the ever-increasing demands of photoelectric devices operating in the ultraviolet (UV) or even deep ultraviolet (DUV) region. In this study, the ternary aluminum indium oxide (Al2xIn2(1-x)O3) films with different Al compositions of x [Al/(Al+In) atomic ratio] were successfully grown on the α-Al2O3 (0001) substrates at 650 °C by metal organic chemical vapor deposition (MOCVD). The influence of Al content on the structural, compositional, electrical and optical properties of the obtained films was investigated in detail. The structural transition from polycrystalline structure of bixbyite In2O3 to amorphous was observed as the Al content increased. The lowest resistivity of 1.52×10-3 Ω·cm was obtained for the sample with x=0.2, along with the respective hall mobility and carrier concentration values of 12.87 cm2V-1s-1 and 2.27×1020 cm-3. The average visible transmittances of over 83% were demonstrated for all the samples. The calculated values of optical band gap for the films indicated continuous increase from 3.82 to 5.88 eV as the x value increased from 0.1 to 0.9. The Al2xIn2(1-x)O3 films with tunable properties may be potentially employed in the fabrication of transparent optoelectronic devices, such as UV detectors, transparent TFTs and short wavelength light-emitting devices.

scholarly journals Composition Dependence of the Band Gap Energy of InxGa1−xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition

1999 ◽  
Vol 4 (S1) ◽  
pp. 106-111 ◽  
Author(s):  
J. Wagner ◽  
A. Ramakrishnan ◽  
D. Behr ◽  
M. Maier ◽  
N. Herres ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Composition Dependence ◽  
Chemical Vapor ◽  
Band Gap Energy ◽  
Organic Chemical ◽  
Gap Energy ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We report on the composition dependence of the band gap energy of strained hexagonal InxGa1−xN layers on GaN with x≤0.15, grown by metal-organic chemical vapor deposition on sapphire substrates. The composition of the (InGa)N was determined by secondary ion mass spectroscopy. High-resolution X-ray diffraction measurements confirmed that the (InGa)N layers with typical thicknesses of 30 nm are pseudomorphically strained to the in-plane lattice parameter of the underlying GaN. Room-temperature photoreflection spectroscopy and spectroscopic ellipsometry were used to determine the (InGa)N band gap energy. The composition dependence of the band gap energy of the strained (InGa)N layers was found to be given by EG(x)=3.43−3.28 × (eV) for x≤0.15. When correcting for the strain induced shift of the fundamental energy gap, a bowing parameter of 3.2 eV was obtained for the composition dependence of the gap energy of unstrained (InGa)N.

Sign in / Sign up

Export Citation Format

Share Document