Erratum: “Lasing mechanism of InGaN/GaN/AlGaN multiquantum well laser diode” [Appl. Phys. Lett. 72, 1359 (1998)]

1998 ◽  
Vol 72 (21) ◽  
pp. 2766-2766
Author(s):  
K. Domen ◽  
A. Kuramata ◽  
T. Tanahashi
Keyword(s):  
Laser Diode ◽  
Lasing Mechanism ◽  
Multiquantum Well

Lasing mechanism of InGaN/GaN/AlGaN multiquantum well laser diode

1998 ◽  
Vol 72 (11) ◽  
pp. 1359-1361 ◽  
Author(s):  
K. Domen ◽  
A. Kuramata ◽  
T. Tanahashi
Keyword(s):  
Laser Diode ◽  
Lasing Mechanism ◽  
Multiquantum Well

10 Gbit/s, 50 km dispersive fibre transmission experiment using strained multiquantum-well DFB laser diode

1991 ◽  
Vol 27 (10) ◽  
pp. 853-855 ◽  
Author(s):  
Y. Miyamoto ◽  
K. Hagimoto ◽  
F. Ichikawa ◽  
M. Yamamoto ◽  
T. Kagawa
Keyword(s):  
Laser Diode ◽  
Transmission Experiment ◽  
Fibre Transmission ◽  
Dfb Laser ◽  
Multiquantum Well

Room-temperature continuous-wave operation of GaInN/GaN multiquantum well laser diode

1998 ◽  
Vol 34 (15) ◽  
pp. 1494 ◽  
Author(s):  
T. Kobayashi ◽  
F. Nakamura ◽  
K. Naganuma ◽  
T. Tojyo ◽  
H. Nakajima ◽  
...  
Keyword(s):  
Laser Diode ◽  
Room Temperature ◽  
Continuous Wave ◽  
Continuous Wave Operation ◽  
Multiquantum Well

Lasing mechanism of type‐I’ PbSnTe–PbTeSe multiquantum well laser with doping structure

1986 ◽  
Vol 59 (9) ◽  
pp. 3023-3027 ◽  
Author(s):  
Akihiro Ishida ◽  
Hiroshi Fujiyasu ◽  
Hiroji Ebe ◽  
Koji Shinohara
Keyword(s):  
Type I ◽  
Lasing Mechanism ◽  
Multiquantum Well

Low threshold 1.55 μm wavelength InAsP/InGaAsP strained multiquantum well laser diode grown by chemical beam epitaxy

1997 ◽  
Vol 71 (1) ◽  
pp. 13-15 ◽  
Author(s):  
J. F. Carlin ◽  
A. V. Syrbu ◽  
C. A. Berseth ◽  
J. Behrend ◽  
A. Rudra ◽  
...  
Keyword(s):  
Laser Diode ◽  
Chemical Beam Epitaxy ◽  
Low Threshold ◽  
Multiquantum Well
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