Rotating-compensator multichannel ellipsometry for characterization of the evolution of nonuniformities in diamond thin-film growth

1998 ◽  
Vol 72 (8) ◽  
pp. 900-902 ◽  
Author(s):  
Joungchel Lee ◽  
P. I. Rovira ◽  
Ilsin An ◽  
R. W. Collins
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Diamond Thin Film

Characterization of Step-Edge Barriers in Organic Thin-Film Growth

Science ◽  
2008 ◽  
Vol 321 (5885) ◽  
pp. 108-111 ◽  
Author(s):  
G. Hlawacek ◽  
P. Puschnig ◽  
P. Frank ◽  
A. Winkler ◽  
C. Ambrosch-Draxl ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Step Edge ◽  
Organic Thin Film

Investigating the role of hydrogen in ultra-nanocrystalline diamond thin film growth

2006 ◽  
Vol 18 (32) ◽  
pp. S1771-S1776 ◽  
Author(s):  
James Birrell ◽  
J E Gerbi ◽  
O A Auciello ◽  
J A Carlisle
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Nanocrystalline Diamond ◽  
Thin Film Growth ◽  
Diamond Thin Film

Rotating-Compensator Multichannel Ellipsometry: Applications in Process Development for Nanocrystalline Diamond Thin Films

1997 ◽  
Vol 502 ◽  
Author(s):  
R. W. Collins ◽  
Joungchel Lee ◽  
P. I. Rovira ◽  
Ilsin An
Keyword(s):  
Thin Film ◽  
Light Beam ◽  
Time Evolution ◽  
Film Growth ◽  
Nanocrystalline Diamond ◽  
Thin Film Growth ◽  
Degree Of Polarization ◽  
S Wave ◽  
Diamond Thin Film ◽  
New Instrument

ABSTRACTA multichannel spectroscopic ellipsometer based on the rotating-compensator principle was developed and applied to characterize nanocrystalline diamond thin film growth processes by plasma-enhanced chemical vapor deposition (PECVD). With the newly-designed instrument, a time resolution of 32 ms is possible for spectra (1.5˜4.0 eV) in the Stokes vector of the light beam reflected from the surface of the growing film. Several advantages of the rotating-compensator over the simpler rotating-polarizer multichannel ellipsometer design are demonstrated here for diamond thin film growth. These include the ability to: (i) resolve the sign ambiguity in the p–s wave phase-shift difference Δ, (ii) obtain accurate Δ values for low ellipticity polarization states, and (iii) deduce spectra in the degree of polarization of the light beam reflected from the film/substrate. The degree of polarization has been applied to characterize the time evolution of light scattering during the nucleation of the diamond, as well as the time evolution of thickness non-uniformity over the probed area of the growing film. In this paper, a brief description of calibration and data reduction for the new instrument is also provided.

Characterization of MgO(100) thin film growth on Mo(100)

2002 ◽  
Vol 506 (3) ◽  
pp. 228-234 ◽  
Author(s):  
Y.D Kim ◽  
J Stultz ◽  
D.W Goodman
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth
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