Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells

1998 ◽  
Vol 72 (7) ◽  
pp. 759-761 ◽  
Author(s):  
E. Lugagne Delpon ◽  
J. L. Oudar ◽  
N. Bouché ◽  
R. Raj ◽  
A. Shen ◽  
...  
2011 ◽  
Vol 19 (10) ◽  
pp. 9737 ◽  
Author(s):  
Richard P. Green ◽  
Mohsin Haji ◽  
Lianping Hou ◽  
Gabor Mezosi ◽  
Rafal Dylewicz ◽  
...  

2007 ◽  
Vol 06 (05) ◽  
pp. 315-318 ◽  
Author(s):  
A. A. KOVALYOV ◽  
O. P. PCHELYAKOV ◽  
V. V. PREOBRAZHENSKII ◽  
M. M. PUTYATO ◽  
N. N. RUBTSOVA ◽  
...  

MBE growth of GaSb / InGaAsSb / GaSb heterostructures of high crystal quality is performed under continual RHEED control. Transmission spectra of the films forming multiple quantum wells in λ ≈ 2–3 μm region confirm possibility to control optical properties of the structures through quantum confinement and through the content of semiconductor elements. New design of saturable absorption semiconductor mirror (SESAM) for Cr 2+: ZnSe laser is proposed and manufactured on the base of the single quantum well GaSb / InGaAsSb / GaSb placed between dielectric antireflection and broadband high reflection coatings.


2007 ◽  
Vol 90 (22) ◽  
pp. 221914 ◽  
Author(s):  
Xiaoming Wen ◽  
Jeffrey A. Davis ◽  
Lap Van Dao ◽  
Peter Hannaford ◽  
V. A. Coleman ◽  
...  

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  

2012 ◽  
Vol 100 (26) ◽  
pp. 261103 ◽  
Author(s):  
J.-R. Chang ◽  
S.-P. Chang ◽  
Y.-J. Li ◽  
Y.-J. Cheng ◽  
K.-P. Sou ◽  
...  

2011 ◽  
Vol 98 (18) ◽  
pp. 181904 ◽  
Author(s):  
Shigetaka Tomiya ◽  
Yuya Kanitani ◽  
Shinji Tanaka ◽  
Tadakatsu Ohkubo ◽  
Kazuhiro Hono

1992 ◽  
Vol 31 (Part 2, No. 3B) ◽  
pp. L313-L315 ◽  
Author(s):  
Stephen Giugni ◽  
Kenji Kawashima ◽  
Kenzo Fujiwara ◽  
Naokatsu Sano

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