Atom-resolved scanning tunneling microscopy of vertically ordered InAs quantum dots

1997 ◽  
Vol 71 (8) ◽  
pp. 1083-1085 ◽  
Author(s):  
Warren Wu ◽  
John R. Tucker ◽  
Glenn S. Solomon ◽  
James S. Harris
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Inas Quantum Dots

scholarly journals Low-temperature scanning tunneling microscopy of selfassembled inas quantum dots grown by droplet epitaxy

2010 ◽  
Vol 3 (2) ◽  
pp. 1299-1304
Author(s):  
C. Durand ◽  
A. Peilloux ◽  
K. Suzuki ◽  
K. Kanisawa ◽  
B. Grandidier ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Scanning Tunneling Microscopy ◽  
Droplet Epitaxy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Inas Quantum Dots ◽  
Temperature Scanning

scholarly journals Capping of InAs quantum dots grown on (311)B InP studied by cross-sectional scanning tunneling microscopy

2006 ◽  
Vol 89 (2) ◽  
pp. 023119 ◽  
Author(s):  
C. Çelebi ◽  
J. M. Ulloa ◽  
P. M. Koenraad ◽  
A. Simon ◽  
A. Letoublon ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Inas Quantum Dots

scholarly journals Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy

2003 ◽  
Vol 82 (21) ◽  
pp. 3758-3760 ◽  
Author(s):  
D. M. Bruls ◽  
P. M. Koenraad ◽  
H. W. M. Salemink ◽  
J. H. Wolter ◽  
M. Hopkinson ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Atomic Level ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Inas Quantum Dots

Morphological Changes to InAs Quantum Dots Caused by GaAs Overgrowth

1999 ◽  
Vol 571 ◽  
Author(s):  
J.B. Smathers ◽  
P. Ballet ◽  
G.J. Salamo
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Surface Diffusion ◽  
Morphological Changes ◽  
Scanning Tunneling ◽  
Morphological Instability ◽  
Tunneling Microscopy ◽  
Specific Mechanism ◽  
Inas Quantum Dots

ABSTRACTWe have used in-situ scanning tunneling microscopy (STM) to study the morphological changes to InAs quantum dots (QD's) caused by overgrowth of a GaAs capping layer. We demonstrate that the InAs islands are highly unstable during GaAs overgrowth and that this morphological instability confirms that significant cation intermixing occurs during overgrowth. In particular, the anisotropic nature of the volume redistribution indicates that In surface diffusion is the specific mechanism of In transfer away from the islands. Images taken after 10 monolayers or more of overgrowth reveal that more rapid GaAs overgrowth better preserves the 3D-islands morphology.

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