Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition

1997 ◽  
Vol 71 (9) ◽  
pp. 1237-1239 ◽  
Author(s):  
Jun-Wei Tsai ◽  
Chun-Yao Huang ◽  
Ya-Hsiang Tai ◽  
Huang-Chung Cheng ◽  
Feng-Cheng Su ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Silicon Thin Film ◽  
Silicon Deposition

Threshold Voltage Shifts in Amorphous Silicon Thin Film Transistors under Bias Stress

1990 ◽  
Vol 192 ◽  
Author(s):  
Tetsu Ogawa ◽  
Sadayoshi Hotta ◽  
Horoyoshi Takezawa
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Charge Trapping ◽  
The Other ◽  
Time Dependent ◽  
Silicon Thin Film ◽  
Bias Stress

ABSTRACTThrough the time and temperature dependence measurements on threshold voltage shifts (Δ VT) in amorphous silicon thin film transistors, it has been found that two separate instability mechanisms exist; within short stress time ranges Δ Vτ increases as log t and this behavior corresponds to charge trapping in SiN. On the other hand, in long stress time ranges Δ VT increases as t t/4 and can be explained by time-dependent creation of trap in a-Si.

Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors During Pulse Operation

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3719-3723 ◽  
Author(s):  
Ryoji Oritsuki ◽  
Toshikazu Horii ◽  
Akira Sasano ◽  
Ken Tsutsui ◽  
Toshiko Koizumi ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Silicon Thin Film ◽  
Pulse Operation ◽  
Threshold Voltage Shift ◽  
Voltage Shift

Material Properties Controlling the Performance of Amorphous Silicon Thin Film Transistors

1984 ◽  
Vol 33 ◽  
Author(s):  
M. J. Powell
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Density Of States ◽  
Threshold Voltage ◽  
Material Properties ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Dangling Bond ◽  
Silicon Thin Film

ABSTRACTAmorphous silicon thin film transistors have been fabricated with a number of different structures and materials. To date, the best performance is obtained with amorphous silicon - silicon nitride thin film transistors in the inverted staggered electrode structure, where the gate insulator and semiconductor are deposited sequentially by plasma enhanced chemical vapour deposition in the same growth apparatus.Localised electron states in the amorphous silicon are crucial in determining transistor performance. Conduction band states (Si-Si antibonding σ*) are broadened and localised in the amorphous network, and their energy distribution determines the field effect mobility. The silicon dangling bond defect is the most important deep localised state and their density determines the prethreshold current and hence the threshold voltage. The density of states is influenced by the gate insulator interface and there is probably a decreasing density of states away from this interface. The silicon dangling bond defect in the bulk amorphous silicon nitride also leads to a localised gap state, which is responsible for the observed threshold voltage instability.Other key material properties include the fixed charge densities associated with primary passivating layers placed on top of the amorphous silicon. The low value of the bulk density of states in the amorphous silicon layer increases the sensitivity of device characteristics to charge at the top interface.

Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress

2005 ◽  
Vol 87 (2) ◽  
pp. 023502 ◽  
Author(s):  
Shah M. Jahinuzzaman ◽  
Afrin Sultana ◽  
Kapil Sakariya ◽  
Peyman Servati ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Constant Current ◽  
Silicon Thin Film ◽  
Current Stress ◽  
Voltage Instability

Proximity Recovery Layers to Speed up the Recovery of Stressed Amorphous Silicon Thin-Film Transistors

1990 ◽  
Vol 192 ◽  
Author(s):  
M. Hack ◽  
W. B. Jackson ◽  
R. Lujan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
High Voltage ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Threshold Voltage Shift ◽  
Speed Up ◽  
Hydrogenated Amorphous

ABSTRACTWe have developed a means to speed up the recovery of both the threshold voltage shift of hydrogenated amorphous silicon (a-Si:H) transistors and the Vx shift of high voltage a-Si devices. This is accomplished by placing a lightly doped compensated layer adjacent to the active layer in these transistors. This proximity recovery layer does not alter the initial characteristics of a-Si:H transistors and is completely process compatible with standard fabrication procedures.

A Substrate Bias Effect on Recovery of the Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors

2007 ◽  
Vol 46 (7A) ◽  
pp. 4042-4045 ◽  
Author(s):  
Chang-Wook Han ◽  
Min-Koo Han ◽  
Nack-Bong Choi ◽  
Chang-Dong Kim ◽  
Ki-Yong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Substrate Bias ◽  
Silicon Thin Film ◽  
Bias Effect ◽  
Threshold Voltage Shift ◽  
Voltage Shift
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