Role of the hydrogen plasma treatment in layer-by-layer deposition of microcrystalline silicon

1997 ◽  
Vol 71 (23) ◽  
pp. 3403-3405 ◽  
Author(s):  
K. Saitoh ◽  
M. Kondo ◽  
M. Fukawa ◽  
T. Nishimiya ◽  
A. Matsuda ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Layer By Layer ◽  
Microcrystalline Silicon ◽  
Layer Deposition

Hydrogen Radical Annealing Effect on the Growth of Microcrystalline Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
Jung Mok Jun ◽  
Kyu Chang Park ◽  
Sung Ki Kim ◽  
Kyung Ha Lee ◽  
Mi Kyung Chu ◽  
...  
Keyword(s):  
Etch Rate ◽  
Hydrogen Plasma ◽  
Annealing Effect ◽  
Layer By Layer ◽  
Deposition Technique ◽  
Microcrystalline Silicon ◽  
Plasma Exposure ◽  
Layer Deposition ◽  
Hydrogen Radical ◽  
Etching Effect

AbstractWe have studied the growth of microcrystalline silicon (μc-Si) and amorphous silicon (a-Si:H) by layer by layer deposition technique, where the deposition and the radical exposure are done alternatively. He or hydrogen plasma exposure gives rise to the etching effect of both μc-Si and a-Si:H even though the etch rate by He plasma is much smaller. The long exposure of hydrogen radical on a-Si:H gives rise to the formation of μc-Si at low substrate temperature (Ts), whereas the hydrogen content decreases at high Ts. The growth mechanism of the crystallite is proposed on the basis of experimental results.

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

Role of in-situ hydrogen plasma treatment on gate bias stability and performance of a-IGZO thin-film transistors

2021 ◽  
Author(s):  
Om Kumar Prasad ◽  
Srikant Kumar Mohanty ◽  
ChienHung Wu ◽  
Tsung Ying Yu ◽  
K-M Chang
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Gate Bias ◽  
Bias Stability ◽  
And Performance

Preparation and testing of silicon nanowires

2014 ◽  
Vol 92 (7/8) ◽  
pp. 819-821 ◽  
Author(s):  
Martin Müller ◽  
Jan Kočka ◽  
Hassan G. El Gohary ◽  
Jiri Stuchlik ◽  
Ha Stuchlikova ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapour Deposition ◽  
Silicon Nanowires ◽  
Vapour Deposition ◽  
Hydrogen Plasma ◽  
Chemical Vapour ◽  
Applied Potential ◽  
Gold Nanoislands

Here we present two ways of preparing lateral (in plane) silicon nanowires with the help of gold nanoislands catalysed plasma enhanced chemical vapour deposition. The role of the applied potential and eventual consecutive hydrogen plasma treatment is tested together with the thickness of the thin Au layer used for self-organised preparation of Au nanoislands.

Microcrystalline Silicon Growth: Deposition Rate Limiting Factors

1998 ◽  
Vol 507 ◽  
Author(s):  
S. Hamma ◽  
D. Colliquet ◽  
P. Rocai Cabarrocas
Keyword(s):  
Deposition Rate ◽  
Hydrogen Plasma ◽  
Limiting Factors ◽  
Layer By Layer ◽  
Microcrystalline Silicon ◽  
Glass Substrates ◽  
Hydrogen Dilution ◽  
Corning Glass ◽  
Silicon Growth

ABSTRACTMicrocrystalline silicon films were deposited on corning glass substrates both by the standard hydrogen dilution and the layer-by-layer (LBL) technique. In-situ UV-visible spectroscopic ellipsometry measurements were performed to analyze the evolution of the composition of the films.The change of the hydrogen plasma conditions by increasing the pressure in the LBL process leads to a faster kinetic of crystallization and to an increase of the deposition rate by a factor of two. The increase of the pressure and the decrease of the inter-electrode distance allowed to increase the deposition rate from 0.26 to 3 Å/s in the hydrogen dilution technique. Interestingly enough, the crystalline fraction of the films remains higher than 50%. However, as the deposition rate increases the growth process results in a slower kinetic of crystallization with a long range evolution of the film composition (up to 0.5 νm).

Reduced defect density in microcrystalline silicon by hydrogen plasma treatment

2013 ◽  
Vol 34 (10) ◽  
pp. 103006
Author(s):  
Jingyan Li ◽  
Xiangbo Zeng ◽  
Hao Li ◽  
Xiaobing Xie ◽  
Ping Yang ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Defect Density ◽  
Hydrogen Plasma ◽  
Microcrystalline Silicon

Mechanism of the Improvement in Microcrystalline Silicon Solar Cells by Hydrogen Plasma Treatment

2013 ◽  
Vol 773 ◽  
pp. 118-123
Author(s):  
Jing Yan Li ◽  
Xiang Bo Zeng ◽  
Hao Li ◽  
Xiao Bing Xie ◽  
Ping Yang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Plasma Treatment ◽  
Defect Density ◽  
Hydrogen Plasma ◽  
Microcrystalline Silicon ◽  
One Dimensional ◽  
Long Wavelength ◽  
Drift Length ◽  
Experimental Improvement

We explain the experimental improvement in long wavelength response by hydrogen plasma treatment (HPT) in n/i interface. The absorption coefficient of the intrinsic microcrystalline silicon (μc-Si) is decreased in the low energy region (0.8~1.0 eV) by HPT, which indicates a lower defect density in μc-Si layer deposited with HPT than its counterpart without HPT. Simulation by one-dimensional device simulation program for the Analysis of Microelectronic and Photonic Structures (AMPS-1D) shows a higher long wavelength response in μc-Si solar cell if the defect density in intrinsic μc-Si layer is smaller. Our simulation results also disclose that the less defect density in intrinsic layer, the lower recombination rate and the higher electric field is. Higher electric field results in longer drift length which will promote collection of carriers generated by photons with long wavelength. Thus we deduce that HPT decreased defect density in absorber layer and improved the performance of μc-Si solar cells in long wavelength response.

Growth of high quality microcrystalline silicon by layer-by-layer deposition technique

1994 ◽  
Vol 34 (1-4) ◽  
pp. 509-515 ◽  
Author(s):  
Kyu Chang Park ◽  
Sung Ki Kim ◽  
Min Park ◽  
Jung Mok Jun ◽  
Kyung Ha Lee ◽  
...  
Keyword(s):  
Layer By Layer ◽  
Deposition Technique ◽  
Microcrystalline Silicon ◽  
High Quality ◽  
Layer Deposition
Sign in / Sign up

Export Citation Format

Share Document