Observation of strain relaxation phenomena in buried and nonburied III–V surface gratings through high resolution x-ray diffraction

1997 ◽  
Vol 71 (22) ◽  
pp. 3227-3229 ◽  
Author(s):  
L. Leprince ◽  
G. T. Baumbach ◽  
A. Talneau ◽  
M. Gailhanou ◽  
J. Schneck
Keyword(s):  
High Resolution ◽  
Strain Relaxation ◽  
Relaxation Phenomena ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals High-resolution X-ray diffraction analysis of strain relaxation in epitaxial oxide thin films

2008 ◽  
Vol 64 (a1) ◽  
pp. C106-C106
Author(s):  
R. Guinebretiere ◽  
F. Conchon ◽  
A. Boulle ◽  
C. Girardot ◽  
S. Pignard ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Diffraction Analysis ◽  
Strain Relaxation ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray ◽  
Epitaxial Oxide

High-Resolution X-Ray Diffraction Measurements of SiGe/Si Structures

1994 ◽  
Vol 375 ◽  
Author(s):  
J. L. Jordan-Sweet ◽  
P. M. Mooney ◽  
G. B. Stephenson
Keyword(s):  
High Resolution ◽  
Alloy Composition ◽  
Strain Relaxation ◽  
Grazing Incidence ◽  
Diffraction Peak ◽  
Thin Layers ◽  
High Flux ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grazing Incidence Diffraction

AbstractHigh-resolution x-ray diffraction is an excellent probe of strain relaxation in complex SiGe structures. The high flux provided by synchrotron sources enables us to make extensive reciprocal space map measurements and evaluate many samples. The diffraction peak positions of each layer in a step-graded structure, measured for two different reflections, yield quantitative values for the relaxation and alloy composition in the layer. Grazing-incidence diffraction allows us to determine the in-plane structure of very thin layers, which have thickness-broadened peaks at conventional diffraction geometries. We demonstrate the power of these techniques with two examples.

Strain relaxation in Ge microcrystals studied by high-resolution X-ray diffraction

2015 ◽  
Vol 213 (2) ◽  
pp. 463-469 ◽  
Author(s):  
Jakub Rozbořil ◽  
Mojmír Meduňa ◽  
Claudiu Valentin Falub ◽  
Fabio Isa ◽  
Hans von Känel
Keyword(s):  
High Resolution ◽  
Strain Relaxation ◽  
X Ray Diffraction ◽  
X Ray

Strain Relaxation in Epitaxial Heterostructures: Sensitivity of High Resolution X-Ray Diffraction

1992 ◽  
Vol 280 ◽  
Author(s):  
M. S. Goorsky ◽  
S. T. Horng ◽  
S. R. Sriffler ◽  
C. S. Stanis
Keyword(s):  
High Resolution ◽  
Strain Relaxation ◽  
Dislocation Line ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Complete Relaxation ◽  
Dislocation Densities ◽  
Interfacial Defects

ABSTRACTComparison of high resolution x-ray diffraction and transmission electron microscopy measurements of Si-based heterostructures demonstrates that diffraction is much more sensitive to strain relaxation than previously reported. This study used as-grown and annealed Si1-x Gex structures grown on (001) Si by UHV/CVD. (004), (113), and (115) rocking curves were employed. Using the TEM measurements as a quantitative guide, relaxation was observed in rocking curves when the misfit dislocation line density was as low as 1 μ-1. Also, interference fringes strongly depend on the presence of interfacial defects. At higher dislocation densities, the diffraction peak from the epitaxial layer broadens considerably but does not shift to a position that represents complete relaxation. Broadening of the substrate diffraction peak also occurs, which is due to dislocations that loop into the substrate.

Heterostructural Characterization of Pseudomorphic, Partially Strained, and Highly Mismatched Semiconductors Using Double Crystal X-Ray Diffraction, TEM, and SEM

1994 ◽  
Vol 340 ◽  
Author(s):  
Hyung Mun Kim ◽  
Sang-Gi Kim ◽  
Sahn Nahm ◽  
Hyung-Ho Park ◽  
Hae-Kwon Lee ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Lattice Mismatch ◽  
Strain Relaxation ◽  
X Ray Diffraction ◽  
Gaas Sample ◽  
Double Crystal ◽  
Cross Sectional ◽  
X Ray ◽  
Peak Broadening

ABSTRACTHeterostructural properties of pseudomorphic (AlGaAs/GaAs), partially strained (GaInAs/GaAs), and highly strained (GaAs/Si) semiconductor systems have been studied using High Resolution Double-Crystal X-ray Diffraction (DXRD), Transmission Electron Microscopy (TEM), and Scanning Electron Microscopy (SEM). Using the high resolution DXRD with CuKα1 and two-reflection Si (220) monochromator, we obtained (004) symmetric and (115) or (224) asymmetric reflection rocking curves for samples grown by molecular beam epitaxy. With 0.5 μm thick samples, perpendicular and in-plane lattice mismatches were calculated using elastic theory and compared with each other. The different degree of relaxation for these samples was observed and correlated with the lattice mismatch, X-ray layer peak broadening (i.e., full width at half maximum), and SEM surface morphology. For a GaInAs/GaAs sample, the strain relaxation along one of the <110> directions was more than the other direction, that is, the strain relaxation is not isotrophic. Also we observed that the lines were mainly parallel in one direction, i.e., they did not form a cross-hatch pattern. TEM images from both cross-sectional and planar views of the samples will be presented.

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