In-plane aligned Pr6O11 buffer layers by ion-beam assisted pulsed laser deposition on metal substrates

1997 ◽  
Vol 71 (20) ◽  
pp. 2952-2954 ◽  
Author(s):  
V. Betz ◽  
B. Holzapfel ◽  
D. Raouser ◽  
L. Schultz
Keyword(s):  
Pulsed Laser Deposition ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Metal Substrates

Development of Texture and Microstructure in MgO Buffer Layers Using Ion-Beam Assisted Pulsed Laser Deposition

2007 ◽  
pp. 239-249 ◽  
Author(s):  
Ruben Hühne ◽  
Christoph Beyer ◽  
Bernhard Holzapfel ◽  
Carl-Georg Oertel ◽  
Ludwig Schultz ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition

Formation of Biaxially Textured MgO Buffer Layers using Ion-Beam Assisted Pulsed Laser Deposition

2000 ◽  
Vol 659 ◽  
Author(s):  
Ruben Hühne ◽  
Christoph Beyer ◽  
Bernhard Holzapfel ◽  
Carl-Georg Oertel ◽  
Ludwig Schultz ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Single Crystals ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Cube Texture ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Internal Stresses ◽  
Nucleation Layer ◽  
Amorphous Substrates

ABSTRACTMgO thin films were deposited on amorphous substrates using ion-beam assisted pulsed laser deposition. The texture formation was investigated in-situ with RHEED. The microstructure of the films was observed by AFM. Using an ion beam at an angle of 55° with respect to the substrate normal, strong nucleation textures develop. Above 250°C a cube texture is observed in films thinner than 10 nm. During further growth this nucleation texture changes in a way that the <200> direction becomes parallel to the ion beam. This change can be explained by the anisotropic sputter rate of MgO found in sputter experiments on single crystals. Moreover, MgO films were deposited homoepitaxially on MgO single crystals above 250°C with internal stresses dreasing with increasing deposition temperature. This result gives rise to hope that homoepitaxial growth of MgO on the nucleation layer without ion-beam assistance should be possible in future PLD-experiments keeping the desired cube texture in thicker films.

Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Hrtem Observation ◽  
Device Applications ◽  
Ferroelectric Hysteresis

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

Pulsed Laser Deposition of Ybco with Yttrium oxide Buffer Layers

2012 ◽  
pp. 63-72
Author(s):  
Rama M. Nekkanti ◽  
Paul N. Barnes ◽  
Lyle B. Brunke ◽  
Timothy J. Haugan ◽  
Nick A. Yust ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Yttrium Oxide ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition
Sign in / Sign up

Export Citation Format

Share Document