Magnetoresistance of epitaxial thin films of ferromagnetic metallic oxide SrRuO3 with different domain structures

1997 ◽  
Vol 71 (12) ◽  
pp. 1724-1726 ◽  
Author(s):  
D. B. Kacedon ◽  
R. A. Rao ◽  
C. B. Eom
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
Metallic Oxide ◽  
Domain Structures

Effect of Domain Structure on the Magnetoresistance of Epitaxial Thin Films of Ferromagnetic Metallic Oxide SrRuO3

1997 ◽  
Vol 494 ◽  
Author(s):  
R. A. Rao ◽  
D. B. Kacedon ◽  
C. B. Eom
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Films ◽  
Domain Structure ◽  
Applied Magnetic Field ◽  
Spin Fluctuations ◽  
Negative Magnetoresistance ◽  
Epitaxial Thin Films ◽  
Metallic Oxide ◽  
Domain Structures

ABSTRACTWe have grown epitaxial ferromagnetic metallic oxide SrRuO3 thin films with different domain structures on (001) LaAlO3 and miscut (001) SrTiO3 substrates. The effect of crystallographic domain structures on the magnetization and magnetoresistive behavior of epitaxial SrRuO3 thin films has been studied. Magnetization measurements on the single domain film on 2° miscut (001) SrTiO3 substrate showed that the in-plane [110] direction, which is aligned along the miscut direction, is the easier axis for magnetization compared to the [001] direction. This film also showed a strong anisotropie magnetoresistance (AMR) effect of ∼ 8% in magnitude. In contrast, the SrRuO3 thin film on (001) LaAlO3 substrate shows identical magnetization and magnetoresistance behavior in two orthogonal directions on the film due to the presence of 90 domains in the plane. For both the films, large negative magnetoresistance effects (-10%) were observed when the current and the applied magnetic field are parallel. The magnetoresistance behavior is explained in terms of suppression of spin fluctuations near Tc and the AMR effect.

Characterization of Magnetic and Dielectric Properties on Y-Type Magnetoplumbite Epitaxial thin Films for High Frequency Application

2001 ◽  
Vol 700 ◽  
Author(s):  
K. Ueno ◽  
I. Ohkubo ◽  
Y. Matsumoto ◽  
N. Okazaki ◽  
T. Hasegawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Resonance Frequency ◽  
Magnetic Films ◽  
Bulk Sample ◽  
High Resistivity ◽  
Epitaxial Thin Films ◽  
Domain Structures ◽  
Magnetic Resonance Frequency ◽  
Magnetic And Dielectric Properties

AbstractMagnetic films for miniaturization of planar inductors operating at GHz frequencies require high resistivity and high ferro-magnetic resonance frequency. Y type magnetoplumbite Ba2Co2Fe12O22(Co2Y) is a candidate material to meet such requirements because it has about 10 &m resistivity and resonance frequency higher than 2 GHz. Recently we succeeded in the fabrication of Co2Y epitaxial thin film on MgAl2O4 substrate by combinatorial pulsed laser deposition technique [3]. Here, we report on the magnetic and dielectric properties of this film. The DC resistivity of the film was 7.5 &m. The dielectric constant at 1.25 GHz was measured by a microwave microscope to be 11.0. An easy axis coercive force and saturation magnetization were about 145 Oe and 2000 Gauss respectively, being close to those of bulk sample. Furthermore, the magnetic micro domain structures of Co2Y epitaxial thin films were observed by a scanning SQUID microscope.

Epitaxial Thin Films And Heterostrcutures of Various Isotropic Metallic Oxides for Device Applications

1994 ◽  
Vol 341 ◽  
Author(s):  
C. B. Eom ◽  
Julia M. Phillips ◽  
R. J. Cava
Keyword(s):  
Thin Films ◽  
Cuprate Superconductors ◽  
Superconducting Devices ◽  
Epitaxial Thin Films ◽  
Metallic Oxide ◽  
Cross Sectional ◽  
Lattice Match ◽  
Metallic Oxides ◽  
Transmission Electron ◽  
Device Applications

AbstractWe have grown epitaxial thin films of various isotropic metallic oxides such as Sr1-xCaxRuO3 and La8-xSrxCu8O2Oin situ by 90° off-axis sputtering. These metallic oxides are pseudo-cubic perovskites with essentially isotropic properties, which could be ideal normal metals for SNS junctions in superconducting devices and for electrodes in ferroelectric devices. We have fabricated epitaxial ferroelectric heterostructures [SrRuO3/Pb(Zr0. 52 Ti0.4 8) O3 /SrRuO3] employing isotropic metallic oxide (SrRuO3) electrodes on substrates of (100) SrTiO3 and (100) Si with an yttria stabilized zirconia buffer layer. They exhibit superior fatigue characteristics over those made with metal electrodes, showing little degradation over 10 cycles, with a large remnant polarization (27 μC/cm2 ). We have also grown epitaxial superconducting heterostructures (YBa2Cu3O7 / La8-xSrxCu8O2O / YBa2Cu3O7 ) with a copper-oxide-based isotropic metallic oxide (La8-xSrxCu8O20) normal metal barrier. X-ray diffraction and cross-sectional transmission electron microscopy reveal these heterostructures to have high crystalline quality and clean interfaces. This material will facilitate fabrication of ideal SNS Josephson junctions with low boundary resistance due to its excellent chemical compatibility and lattice match with cuprate superconductors and will be useful for determining the source of interface resistance in such heterostructures.

Epitaxial Thin Films and Heterostrcutures of Copper-Oxide-Based Isotropic Metallic Oxides for Device Applications

1995 ◽  
Vol 401 ◽  
Author(s):  
C. B. Eom
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Cuprate Superconductors ◽  
Superconducting Devices ◽  
Epitaxial Thin Films ◽  
Metallic Oxide ◽  
Cross Sectional ◽  
Lattice Match ◽  
Metallic Oxides ◽  
New Family

AbstractWe have grown epitaxial thin films of a new family of copper-oxide-based isotropic metallic oxides such as La6.4Sr1.6Cu8O20, La5BaCu6O13 and La6BaYCu8O20in situ by 900° off-axis sputtering. These metallic oxides are pseudo-cubic perovskites with essentially isotropic properties, which could be ideal normal metals for SNS junctions in superconducting devices. We have also grown epitaxial SNS superconducting heterostructures (c-axis YBa2Cu3O7 / La6.4Sr1.6Cu8O20 / c-axis YBa2Cu3O7) with a copper-oxide-based isotropic metallic oxide (La6.4Sr1.6Cu8O20) normal metal barrier. X-ray diffraction and cross-sectional transmission electron microscopy reveal these heterostructures to have high crystalline quality and clean interfaces. This material will facilitate fabrication of ideal SNS Josephson junctions with low boundary resistance due to its excellent chemical compatibility and lattice match with cuprate superconductors and will be useful for determining the source of interface resistance in such heterostructures.

The Effect of Miscut Angle and Miscut Direction of Vicinal (001) SrTiO3 Substrates on The Domain Structure of Epitaxial SrRuO3 Thin Films

1997 ◽  
Vol 474 ◽  
Author(s):  
Q. Gan ◽  
R. A. Rao ◽  
C.B Eom
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Orthorhombic Unit Cell ◽  
Metallic Oxide ◽  
Force Microscopy ◽  
Atomic Force ◽  
Step Flow Growth ◽  
Miscut Angle

ABSTRACTWe have grown epitaxial thin films of isotropie metallic oxide SrRuC>3 on both exact and vicinal (001) SrTiO3 substrates with miscut angle (α) up to 5.0° and miscut direction (β) up to 37° away from the in-plane [010] axis. The effects of both α and β on the epitaxial growth and domain structure of epitaxial SrRuC>3 thin films were studied by x-ray diffraction and atomic force microscopy (AFM). On vicinal SrTiO3 substrates with a large miscut angle (α = 1.7°, 2.0°, 4.1°, and 5.0°) and miscut direction close to the [010] axis, single crystal epitaxial (110)° SrRuO3 thin films were obtained. [The superscript o refers to the Miller indices based on the orthorhombic unit cell.] Decreasing the substrate miscut angle or aligning the miscut direction close to the [110] axis (β = 45°) resulted in an increase of 90° domains in the plane. The films grown on vicinal substrates displayed a significant improvement in crystalline quality and in-plane epitaxial alignment as compared to the films grown on exact (001) SrTiO3 substrates. AFM revealed that as the miscut angle increased the growth mechanism changed from two dimensional nucleation to step flow growth.

Ferroelectric domain structures in SrBi2Nb2O9 epitaxial thin films: Electron microscopy and phase-field simulations

2004 ◽  
Vol 95 (11) ◽  
pp. 6332-6340 ◽  
Author(s):  
Y. L. Li ◽  
L. Q. Chen ◽  
G. Asayama ◽  
D. G. Schlom ◽  
M. A. Zurbuchen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Phase Field ◽  
Ferroelectric Domain ◽  
Epitaxial Thin Films ◽  
Domain Structures

Epitaxial thin films and heterostructures of a copper‐oxide‐based isotropic metallic oxide (La8−xSrxCu8O20)

1995 ◽  
Vol 77 (10) ◽  
pp. 5449-5451 ◽  
Author(s):  
C. B. Eom ◽  
R. J. Cava ◽  
Julia M. Phillips ◽  
D. J. Werder
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Epitaxial Thin Films ◽  
Metallic Oxide

Strain stabilized metal–insulator transition in epitaxial thin films of metallic oxide CaRuO3

1997 ◽  
Vol 70 (22) ◽  
pp. 3035-3037 ◽  
Author(s):  
R. A. Rao ◽  
Q. Gan ◽  
C. B. Eom ◽  
R. J. Cava ◽  
Y. Suzuki ◽  
...  
Keyword(s):  
Thin Films ◽  
Insulator Transition ◽  
Epitaxial Thin Films ◽  
Metallic Oxide ◽  
Metal Insulator Transition ◽  
Metal Insulator
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