Influence of oxygen background pressure on crystalline quality of SrTiO3 films grown on MgO by pulsed laser deposition

1997 ◽  
Vol 71 (12) ◽  
pp. 1709-1711 ◽  
Author(s):  
R. Kalyanaraman ◽  
R. D. Vispute ◽  
S. Oktyabrsky ◽  
K. Dovidenko ◽  
K. Jagannadham ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystalline Quality

Crystalline quality of ZnSe thin films grown on GaAs by pulsed laser deposition in He and Ar ambients

2001 ◽  
Vol 388 (1-2) ◽  
pp. 189-194 ◽  
Author(s):  
Tapas Ganguli ◽  
M. Vedvyas ◽  
P. Bhattacharya ◽  
L.M. Kukreja ◽  
Alka Ingale ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystalline Quality ◽  
Znse Thin Films

High crystalline quality ZnSe films grown by pulsed laser deposition

1995 ◽  
Vol 67 (10) ◽  
pp. 1390-1392 ◽  
Author(s):  
M. Y. Chern ◽  
H. M. Lin ◽  
C. C. Fang ◽  
J. C. Fan ◽  
Y. F. Chen
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystalline Quality ◽  
High Crystalline Quality

Effect of nitrogenized Si(1 1 1) substrates on the quality of ZnO films grown by pulsed laser deposition

2008 ◽  
Vol 42 (3) ◽  
pp. 035307 ◽  
Author(s):  
L Wang ◽  
Y C Liu ◽  
C S Xu ◽  
Y Q Qiu ◽  
L Zhao ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films

scholarly journals Lead potassium niobate thin films grown by Pulsed Laser Deposition

2016 ◽  
Vol vol1 (1) ◽  
Author(s):  
Billal Allouche ◽  
Yaovi Gagou ◽  
M. El Marssi
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Potassium Niobate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Parameters ◽  
Out Of Plane

By pulsed laser deposition, lead potassium niobate Pb2KNb5O15 was grown on (001) oriented Gd3Ga5O12 substrate using a platinum buffer layer. The PKN thin films were characterized by X-Ray diffraction and Scanning Electron Microscopy (SEM). The dependence of their structural properties as a function of the deposition parameters was studied. It has been found that the out of plane orientation of PKN film depends on the oxygen pressure used during the growth. Indeed, PKN thin film is oriented [001] for low pressure and is oriented [530] for high pressure. For these two orientations, the crystalline quality of PKN film was determined using omega scans.

Effect of target–substrate distance on the quality of AlN films grown on Si(110) substrates by pulsed laser deposition

2015 ◽  
Vol 160 ◽  
pp. 20-23 ◽  
Author(s):  
Weijia Yang ◽  
Wenliang Wang ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
Ying Liu ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Substrate Distance

scholarly journals Structure Quality of LuFeO3 Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 61 ◽  
Author(s):  
Sondes Bauer ◽  
Adriana Rodrigues ◽  
Lukáš Horák ◽  
Xiaowei Jin ◽  
Reinhard Schneider ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Lattice Parameter ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray

Structural quality of LuFeO 3 epitaxial layers grown by pulsed-laser deposition on sapphire substrates with and without platinum Pt interlayers has been investigated by in situ high-resolution X-ray diffraction (reciprocal-space mapping). The parameters of the structure such as size and misorientation of mosaic blocks have been determined as functions of the thickness of LuFeO 3 during growth and for different thicknesses of platinum interlayers up to 40 nm. By means of fitting of the time-resolved X-ray reflectivity curves and by in situ X-ray diffraction measurement, we demonstrate that the LuFeO 3 growth rate as well as the out-of-plane lattice parameter are almost independent from Pt interlayer thickness, while the in-plane LuFeO 3 lattice parameter decreases. We reveal that, despite the different morphologies of the Pt interlayers with different thickness, LuFeO 3 was growing as a continuous mosaic layer and the misorientation of the mosaic blocks decreases with increasing Pt thickness. The X-ray diffraction results combined with ex situ scanning electron microscopy and high-resolution transmission electron microscopy demonstrate that the Pt interlayer significantly improves the structure of LuFeO 3 by reducing the misfit of the LuFeO 3 lattice with respect to the material underneath.

Imprint of La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O Heterostructures Grown by Pulsed Laser Deposition

1994 ◽  
Vol 361 ◽  
Author(s):  
J. Lee ◽  
R. Ramesh ◽  
V.G. Keramidas
Keyword(s):  
Pulsed Laser Deposition ◽  
Bismuth Titanate ◽  
Polarization State ◽  
Pulsed Laser ◽  
Hysteresis Loops ◽  
Pronounced Effect ◽  
The Other ◽  
Laser Deposition ◽  
Switching Behavior ◽  
Crystalline Quality

ABSTRACTLa-Sr-Co-O(LSCO)/Pb-La-Zr-Ti-O(PLZT)/La-Sr-Co-O heterostructures with different crystalline quality have been grown on LaAlO3 and Si with a bismuth titanate template layer. Imprint of the heterostructures are investigated in comparison with fatigue and retention. Oxygen ambient during cooling the heterostructures was also varied to investigate the imprint. With consideration of the switching behavior caused by imprint, imprint behavior was deconvoluted from fatigue and retention. In epitaxial PLZT capacitors grown on LaAlO3, imprint behavior was found to be significantly dependent on the oxygen ambient. As the oxygen ambient became more reducing, the capacitors developed more voltage asymmetry in hysteresis loops and a more preferred polarization state directed towards the top electrode. On the other hand, oriented PLZT capacitors exhibited less pronounced effect of the oxygen ambient on the imprint behavior.

Low Electrically Resistive Transparent Indium-Tin-Oxide Epitaxial Film on (001) Surface of YSZ by Pulsed Laser Deposition

2000 ◽  
Vol 623 ◽  
Author(s):  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
Hideo Hosono ◽  
Hiroshi Kawazoe ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Epitaxial Film ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Flat Substrate ◽  
Ito Thin Films ◽  
Almost All

AbstractHigh quality ITO thin films were grown hetero-epitaxially on extremely flat substrate of (001) YSZ by a pulsed laser deposition technique at a substrate temperature of 600°C. The crystal orientation relationship between the film and YSZ were confirmed as ITO (001) // YSZ (001) and ITO (010) // YSZ (010), respectively, by HR-XRD and HR-TEM. The carrier densities of the films were almost equal to Sn02 concentration in the films. That is, almost all the doped Sn4+ ions were activated to release electrons to the conduction band. The carrier densities of the films were enhanced up to 1.9×1021cm−3, while the Hall mobility showed a slight, almost linear, decrease from 55 to 40cm2V−1s−1 with increasing SnO2 concentration. The low resistivity is due to larger electron mobility, which most likely resulted from good crystal quality of the films. The optical transmissivity of the film exceeded 85% at wavelengths from 340 to 780nm.

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