Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range

1997 ◽  
Vol 71 (10) ◽  
pp. 1403-1405 ◽  
Author(s):  
H. Mohseni ◽  
E. Michel ◽  
Jan Sandoen ◽  
M. Razeghi ◽  
W. Mitchel ◽  
...  
Keyword(s):  
Infrared Range ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Growth and characterization of type-II nonequilibrium photovoltaic detectors for long-wavelength infrared range

2000 ◽  
Author(s):  
Hooman Mohseni ◽  
Joseph S. Wojkowski ◽  
Abbes Tahraoui ◽  
Manijeh Razeghi ◽  
Gail J. Brown ◽  
...  
Keyword(s):  
Infrared Range ◽  
Type Ii ◽  
Long Wavelength ◽  
Photovoltaic Detectors ◽  
Long Wavelength Infrared

A Long-Wavelength Infrared Photoluminescence Spectrometer for the Characterization of Semiconductor Materials

1994 ◽  
Vol 299 ◽  
Author(s):  
R. P. Wright ◽  
S. E. Kohn ◽  
N. M. Haegel
Keyword(s):  
Infrared Detector ◽  
Optical Emission ◽  
High Sensitivity ◽  
Radiation Emission ◽  
Long Wavelength ◽  
Ion Laser ◽  
Detector Materials ◽  
Long Wavelength Infrared ◽  
Argon Ion

AbstractA new photoluminescence spectrometer has been developed for the characterization of optical emission in the 2.5 to 14.1 micron wavelength range. This instrument provides high sensitivity for the detection of interband and defect luminescence in a variety of infrared detector materials. The spectrometer utilizes a solid state photomultiplier detector and a circular variable filter, which serves as the resolving element. The entire spectrometer is cooled to 5K in order to decrease thermal radiation emission. Band-edge luminescence at 10.1 microns from HgCdTe samples has been readily detected with argon-ion laser excitation powers less than 70 mW/cm2. Representative spectra from HgCdTe and other infrared detector materials are presented.

Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range

2018 ◽  
Vol 52 (4) ◽  
pp. 436-441
Author(s):  
V. V. Rumyantsev ◽  
L. S. Bovkun ◽  
A. M. Kadykov ◽  
M. A. Fadeev ◽  
A. A. Dubinov ◽  
...  
Keyword(s):  
Stimulated Emission ◽  
Infrared Range ◽  
Narrow Gap ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Mbe Growth and Characterization of Hgcdte Heterostructures

1990 ◽  
Vol 198 ◽  
Author(s):  
R.J. Koestner ◽  
M.W. Goodwin ◽  
H.F. Schaake
Keyword(s):  
High Performance ◽  
Misfit Dislocations ◽  
Mbe Growth ◽  
Long Wavelength ◽  
Fine Control ◽  
Critical Materials ◽  
Long Wavelength Infrared ◽  
Growth Technology ◽  
Very High

ABSTRACTHgCdTe heterostructures consisting of a thin n-type widegap (250 meV or 5 μm cutoff) layer deposited on an n-type narrowgap (100-125 meV or 10-13 μm cutoff) layer offer the promise of very high performance metal-insulator-semiconductor (MIS) photocapacitors for long wavelength infrared (LWIR) detection. Molecular Beam Epitaxy (MBE) is a candidate growth technology for these two layer films due to its fine control in composition, thickness and doping concentration. The critical materials issues are reducing the defect content associated with twins in the grown layers, achieving low net donor concentrations in the widegap layer, and avoiding the formation of misfit dislocations at the HgCdTe heterointerface. This paper will report on our recent progress in these directions.

InGaAs-Capped InAs–GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range

2009 ◽  
Vol 21 (18) ◽  
pp. 1332-1334 ◽  
Author(s):  
Wei-Hsun Lin ◽  
Chi-Che Tseng ◽  
Kuang-Ping Chao ◽  
Shu-Cheng Mai ◽  
Shih-Yen Lin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Infrared Range ◽  
Long Wavelength ◽  
Quantum Dot Infrared Photodetectors ◽  
Gaas Quantum Dot ◽  
Long Wavelength Infrared

scholarly journals Magnetooptical studies and stimulated emission in narrow gap HgTe/CdHgTe structures in the very long wavelength infrared range

2018 ◽  
Vol 52 (4) ◽  
pp. 464
Author(s):  
V.V. Rumyantsev ◽  
L.S. Bovkun ◽  
A.M. Kadykov ◽  
M.A. Fadeev ◽  
A.A. Dubinov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Pumping ◽  
High Energy ◽  
Stimulated Emission ◽  
Infrared Range ◽  
Recombination Mechanism ◽  
Carrier Heating ◽  
Long Wavelength ◽  
Carrier Recombination ◽  
Long Wavelength Infrared

AbstractWe investigate the prospects of HgTe/HgCdTe quantum wells for long-wavelength interband lasers (λ = 15–30 μm). The properties of stimulated emission (SE) and magnetoabsorbtion data of QWs structures with wide-gap HgCdTe dielectric waveguide provide an insight on dominating non-radiative carrier recombination mechanism. It is shown that the carrier heating under intense optical pumping is the main factor limiting the SE wavelength and intensity, since the Auger recombination is greatly enhanced when carriers populate high energy states in the valence band.

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