Low-temperature nitridation of silicon surface using NH3-decomposed species in a catalytic chemical vapor deposition system

1997 ◽  
Vol 71 (10) ◽  
pp. 1371-1372 ◽  
Author(s):  
Akira Izumi ◽  
Hideki Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Silicon Surface ◽  
Chemical Vapor ◽  
Catalytic Chemical Vapor Deposition

Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

2000 ◽  
Vol 611 ◽  
Author(s):  
Akira Izumi ◽  
Hidekazu Sato ◽  
Hideki Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Catalytic Decomposition ◽  
Catalytic Chemical Vapor Deposition ◽  
Sio2 Films ◽  
X Ray

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

Low Temperature Formation of Ultra-Thin SiO2 Layers Using Direct Oxidation Method in a Catalytic Chemical Vapor Deposition System

1999 ◽  
Vol 567 ◽  
Author(s):  
A. Izumi ◽  
S. Sohara ◽  
M. Kudo ◽  
H. Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Oxidation States ◽  
Direct Oxidation ◽  
Oxidation Method ◽  
Catalytic Chemical Vapor Deposition ◽  
Intermediate Oxidation

ABSTRACTThis paper reports a procedure for low-temperature formation of silicon dioxide (SiO2) using a catalytic chemical vapor deposition (Cat-CVD) system. The surface of Si(100) is oxidized at temperatures as low as 200°C and a few nm SiO2 films are formed. Electrical and structural properties of the layers are investigated. It is found that breakdown electric field, leakage current and the density of intermediate oxidation states is comparable with thermally oxidized sample.

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