Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs

1997 ◽  
Vol 71 (8) ◽  
pp. 1118-1120 ◽  
Author(s):  
P. Kordoš ◽  
M. Marso ◽  
A. Förster ◽  
J. Darmo ◽  
J. Betko ◽  
...  
Keyword(s):  
Low Temperature ◽  
Space Charge ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial

Incorporation of Silicon in Low Temperature Molecular Beam Epitaxial GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
M. O. Manasreh ◽  
K. R. Evans ◽  
C. E. Stutz ◽  
D. C Look ◽  
J. Hemsky
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Infrared Absorption ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Vibrational Mode ◽  
The Other ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Absorption Technique

ABSTRACTThe localized vibrational mode (LVM) of silicon donor (SiGa) in molecular beam epitaxial GaAs layers grown at various temperatures is studied using the infrared absorption technique. It is found that the total integrated absorption of this LVM is decreased as the growth temperature decreases. This finding suggests a nonsubstitutional incorporation of Si in GaAs layers grown at ∼200 °C. On the other hand, an almost complete substitutional incorporation is obtained in GaAs layers grown at temperatures higher that 350 °C. Thermal annealing does not cause any recovery of the SiGa LVMs in present GaAs layers grown at ∼200°C.

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