Microwave measurement of shot noise in resonant tunneling diodes

1997 ◽  
Vol 71 (4) ◽  
pp. 530-532 ◽  
Author(s):  
A. Przadka ◽  
K. J. Webb ◽  
D. B. Janes ◽  
H. C. Liu ◽  
Z. R. Wasilewski
2007 ◽  
Vol 75 (12) ◽  
Author(s):  
I. A. Maione ◽  
M. Macucci ◽  
G. Iannaccone ◽  
G. Basso ◽  
B. Pellegrini ◽  
...  

1991 ◽  
Vol 38 (12) ◽  
pp. 2716-2717 ◽  
Author(s):  
E.R. Brown ◽  
C.D. Parker ◽  
A.R. Calawa ◽  
M.J. Manfra

2005 ◽  
Vol 71 (19) ◽  
Author(s):  
A. K. M. Newaz ◽  
W. Song ◽  
E. E. Mendez ◽  
Y. Lin ◽  
J. Nitta

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.


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