Characterization of the dominant midgap levels in Si-doped GaN by optical-isothermal capacitance transient spectroscopy

1997 ◽  
Vol 71 (4) ◽  
pp. 524-526 ◽  
Author(s):  
P. Hacke ◽  
H. Okushi
Keyword(s):  
Si Doped ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

Transient Capacitance Characterization of Deep Levels in Undoped and Si-Doped GaN

2003 ◽  
Vol 764 ◽  
Author(s):  
S. Nakamura ◽  
P. Liu ◽  
M. Suhara ◽  
T. Okumura
Keyword(s):  
Chemical Vapor ◽  
Deep Levels ◽  
Yellow Luminescence ◽  
Capacitance Measurements ◽  
Transient Capacitance ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

AbstractThe deep levels in both undoped and Si-doped GaN layer grown by metalorganic chemical vapor deposition have been characterized by photocapacitance and transient capacitance spectroscopy. The increase in the photocapacitance was observed in both GaN samples in the range of 1.8 to 2.2 eV. This is due to the photoionization of carriers from the deep levels associated with the yellow luminescence (YL). In addition, the transient capacitance measurements after the photoionization were also performed in the range of 1.8 to 3.4 eV. The notable transient of capacitance was observed at the photon energies of about 2.1 and 3.4 eV, the former could be associated with the change in the charge state of the YL center and latter might stem from some other defects capturing photogenerated carriers. By using the isothermal capacitance transient spectroscopy (ICTS) analysis, the ICTS peaks due to the deep levels associated with YL were detected at about t = 150 s in both GaN samples. In addition, another ICTS peak was detected only in the Si-doped GaN samples. It is considered that this peak is associated with the deep levels deeper than YL levels and the deeper levels originate from defects induced by Si doping.

Characterization of interface states in (Sr, Ca)TiO3−x based ceramics by ICTS analysis

1991 ◽  
Vol 6 (6) ◽  
pp. 1346-1349 ◽  
Author(s):  
Yoshitaka Nakano
Keyword(s):  
Interface States ◽  
Oxidation Temperature ◽  
Trap Level ◽  
Ohmic Conduction ◽  
Chemisorbed Oxygen ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy ◽  
Good Agreement

Isothermal capacitance transient spectroscopy measurements were performed to study the reoxidizing induced change in interface states in (Sr, Ca)TiO3−x based ceramics. A discrete acceptor type trap level was detected with reoxidation below the oxidation temperature of grain surfaces, but two deep levels were detected with reoxidation above this temperature. These ICTS results are in good agreement with the previous report with the DLTS measurements. These interface states are considered to originate from chemisorbed oxygen (O2−, O−) on grain surfaces. The O− and O2− chemisorption levels contribute to the non-ohmic conduction with reoxidizing anneals below and above the oxidation temperature, respectively.

Effects of leakage current on isothermal capacitance transient spectroscopy signals for midgap levels in GaAs

1990 ◽  
Vol 67 (3) ◽  
pp. 1380-1383 ◽  
Author(s):  
Eun Kyu Kim ◽  
Hoon Young Cho ◽  
Suk‐Ki Min ◽  
Sung Ho Choh ◽  
Susumu Namba
Keyword(s):  
Leakage Current ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy
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