Dielectric properties of silicon nitride films deposited by microwave electron cyclotron resonance plasma chemical vapor deposition at low temperature

1997 ◽  
Vol 71 (3) ◽  
pp. 336-337 ◽  
Author(s):  
Chao Ye ◽  
Zhaoyuan Ning ◽  
Mingrong Shen ◽  
Hao Wang ◽  
Zhaoqiang Gan
Keyword(s):  
Dielectric Properties ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Nitride Films ◽  
Resonance Plasma

Effects of Composition on the Microstructures and Optical Properties of Hydrogenated Amorphous Silicon Carbide Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition

1999 ◽  
Vol 593 ◽  
Author(s):  
Lih-Hsiung Chan ◽  
Wei-Zen Chou ◽  
Lih-Hsin Chou
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous ◽  
Resonance Plasma

ABSTRACTHydrogenated amorphous silicon carbide films (a -SiC:H) were prepared from CH4, SiH4, and Ar mixtures by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition (ECR PCVD). The deposition of the thin films was proceeded with the following optimized conditions; microwave power: 900W, Ar flux : 90sccm, and total flux: 113.4 sccm. The substrate temperature was around 100∼120°C during deposition. For comparisons, the relative flux ratio of methane to silane was varied to produce thin films of different compositions to investigate the relationships between the associated compositions of films and their corresponding microstructures and optical properties. Moreover, both film's microstructures and their optical properties were analyzed to find out as to how they are interrelated. Furthermore, the surface morphology and amorphous microstructures were confirmed by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM), respectively. And, x-ray Photoelectron Spectroscopy (XPS) was employed to study the relative atomic ratio of C to Si along with the bonding conditions in the thin films. Finally, the Hydrogen concentration and the amounts of C-H and Si-H bonds were determined by Fourier transform infrared spectroscopy(FTIR), while the optical properties were measured by optical spectrophotometer.

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