The growth of AlGaAs–InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects

1997 ◽  
Vol 70 (1) ◽  
pp. 52-54 ◽  
Author(s):  
Robert N. Bicknell-Tassius ◽  
Kyeong Lee ◽  
April S. Brown ◽  
Georgianna Dagnall ◽  
Gary May
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Structures ◽  
Ingaas Quantum Well

GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

1985 ◽  
Vol 47 (4) ◽  
pp. 394-396 ◽  
Author(s):  
H. Temkin ◽  
M. B. Panish ◽  
P. M. Petroff ◽  
R. A. Hamm ◽  
J. M. Vandenberg ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Structures ◽  
Gas Source

GaAs‐InGaAs quantum‐well resonant‐tunneling switching device grown by molecular beam epitaxy

1994 ◽  
Vol 64 (20) ◽  
pp. 2685-2687 ◽  
Author(s):  
Wen‐Chau Liu ◽  
Der‐Feng Guo ◽  
Shiuh‐Ren Yih ◽  
Jing‐Tong Liang ◽  
Lih‐Wen Liah ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Switching Device ◽  
Ingaas Quantum Well

Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy

1996 ◽  
Vol 11 (8) ◽  
pp. 1185-1188 ◽  
Author(s):  
A N Baranov ◽  
Y Cuminal ◽  
G Boissier ◽  
J C Nicolas ◽  
J L Lazzari ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures
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