High peak-current-density strained-layer In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes grown by metal-organic chemical vapor deposition
2000 ◽
Vol 7
(1)
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pp. 12
2021 ◽
Vol 15
(6)
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pp. 2170024
2004 ◽
Vol 110
(1)
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pp. 34-37
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