The reversal of light-induced degradation in amorphous silicon solar cells by an electric field

1997 ◽  
Vol 70 (16) ◽  
pp. 2168-2170 ◽  
Author(s):  
D. E. Carlson ◽  
K. Rajan
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Silicon Solar Cells

Transport parameters and electric field profile in amorphous silicon solar cells

1991 ◽  
Vol 23 (2-4) ◽  
pp. 273-281
Author(s):  
R. Könenkamp ◽  
S. Muramatsu ◽  
H. Itoh ◽  
S. Matsubara ◽  
T. Shimada
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Field Profile ◽  
Transport Parameters ◽  
Electric Field Profile

scholarly journals Internal electric field and fill factor of amorphous silicon solar cells

2010 ◽  
Author(s):  
Michael Stuckelberger ◽  
Arvind Shah ◽  
Janez Krc ◽  
Matthieu Despeisse ◽  
Fanny Meillaud ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Fill Factor ◽  
Silicon Solar Cells ◽  
Internal Electric Field

Effects of Carbon Grading at the p/i Interface on the Open Circuit Voltage of p-i-n and n-i-p Amophous Silicon Solar Cells

1987 ◽  
Vol 95 ◽  
Author(s):  
N. T. Tran ◽  
F. R. Jeffrey ◽  
D. J. Olsen
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Open Circuit Voltage ◽  
Electron Tunneling ◽  
Open Circuit ◽  
Silicon Solar Cells

AbstractCarbon grading in the buffer layer at the p/i interface increases the open circuit voltage of both p-i-n and n-i-p amorphous silicon solar cells. We propose that carbon grading enlarges the electric field and reduces the electron tunneling at the p/i interface.

Determination of electric field profiles in amorphous silicon solar cells

1990 ◽  
Vol 57 (5) ◽  
pp. 478-480 ◽  
Author(s):  
R. Könenkamp ◽  
S. Muramatsu ◽  
H. Itoh ◽  
S. Matsubara ◽  
T. Shimada
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Silicon Solar Cells

scholarly journals Three-Terminal Amorphous Silicon Solar Cells

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Cheng-Hung Tai ◽  
Chu-Hsuan Lin ◽  
Chih-Ming Wang ◽  
Chun-Chieh Lin
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Thickness Optimization ◽  
Material Parameters ◽  
Si Solar Cell ◽  
Average Electric Field ◽  
Recombination Centers

Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

Amorphous silicon solar cells on textured aluminium substrate prepared by electrical etching

Solar Cells ◽  
1986 ◽  
Vol 17 (2-3) ◽  
pp. 191-200 ◽  
Author(s):  
Tokumi Mase ◽  
Hiroshi Takei ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Aluminium Substrate
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