Effects of Carbon Grading at the p/i Interface on the Open Circuit Voltage of p-i-n and n-i-p Amophous Silicon Solar Cells

1987 ◽  
Vol 95 ◽  
Author(s):  
N. T. Tran ◽  
F. R. Jeffrey ◽  
D. J. Olsen
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Open Circuit Voltage ◽  
Electron Tunneling ◽  
Open Circuit ◽  
Silicon Solar Cells

AbstractCarbon grading in the buffer layer at the p/i interface increases the open circuit voltage of both p-i-n and n-i-p amorphous silicon solar cells. We propose that carbon grading enlarges the electric field and reduces the electron tunneling at the p/i interface.

Improvement the Open Circuit Voltage of Amorphous Silicon Solar Cells by Treating the P Layer with Hydrogen Plasma

2011 ◽  
Vol 181-182 ◽  
pp. 328-331
Author(s):  
Ming Ji Shi ◽  
Lei Xiong ◽  
Lan Li Chen
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Open Circuit Voltage ◽  
Volume Fraction ◽  
Hydrogen Plasma ◽  
Cell Mass ◽  
Energy Conversion Efficiency ◽  
Open Circuit ◽  
Silicon Solar Cells ◽  
Amorphous Silicon Solar Cell

It is necessary to improve the open circuit voltage of amorphous silicon solar cells for its applications. In this paper, we discuss the effects of hydrogen plasma treatment on the P layer and the performance of the amorphous silicon solar cells. The result shows that the open circuit voltage increased by 0.0257V, the fill factor increased by 0.039 and the energy conversion efficiency increased by 9%. The highest VOCwe got was 0.99V. Treating P layer with hydrogen plasma has been demonstrated to result in materials with improved crystalline volume fraction which was very effective to increase the light absorption of the intrinsic layer. What is more, it could be easily integrated into the amorphous silicon solar cell mass production process.

scholarly journals Bandtail Limits to Solar Conversion Efficiencies in Amorphous Silicon Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
K. Zhu ◽  
J. Yang ◽  
W. Wang ◽  
E. A. Schiff ◽  
J. Liang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Power Density ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Drift Mobility ◽  
Silicon Solar Cells ◽  
Solar Conversion ◽  
Conversion Efficiencies

AbstractWe describe a model for a-Si:H based pin solar cells derived primarily from valence bandtail properties. We show how hole drift-mobility measurements and measurements of the temperature-dependence of the open-circuit voltage VOC can be used to estimate the parameters, and we present VOC(T) measurements. We compared the power density under solar illumination calculated with this model with published results for as-deposited a-Si:H solar cells. The agreement is within 4% for a range of thicknesses, suggesting that the power from as-deposited cells is close to the bandtail limit.

Enhancement of Open Circuit Voltage via Light soaking in Amorphous Silicon Solar Cells

2000 ◽  
Vol 39 (Part 1, No. 6A) ◽  
pp. 3339-3343 ◽  
Author(s):  
Masao Isomura ◽  
Michio Kondo ◽  
Akihisa Matsuda
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Silicon Solar Cells
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