Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure

1997 ◽  
Vol 70 (8) ◽  
pp. 1002-1004 ◽  
Author(s):  
Jan-Shing Su ◽  
Wei-Chou Hsu ◽  
Yu-Shyan Lin ◽  
Wei Lin
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Real Space ◽  
Real Space Transfer

scholarly journals DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors

1998 ◽  
Vol 21 (2) ◽  
pp. 79-85
Author(s):  
H. C. Chen
Keyword(s):  
High Frequency ◽  
Cutoff Frequency ◽  
Differential Resistance ◽  
Negative Resistance ◽  
Real Space ◽  
Current Gain ◽  
Hot Electron ◽  
S Parameter ◽  
First Time ◽  
Real Space Transfer

DC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor (NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. The negative differential resistance (NDR) resulted from the observation of the hot electron real space transfer effect in InGaAs channel. By Hall measurements, the structure shows carrier mobility as high as 4300 (13500) cm2/v-s at 300 (77)K, which is suitable for high frequency operation. For DC performance, the largest peak-to-valley current ratio of the device is about 5 at room temperature. For AC performance, S-parameter measurements of high frequency and microwave characteristics indicate a projected maximum frequency of oscillation offmax⁡=2.7GHzand a current gain cutoff frequency (fT) occurs at 1.8GHz.

Negative differential resistance through real‐space electron transfer

1979 ◽  
Vol 35 (6) ◽  
pp. 469-471 ◽  
Author(s):  
K. Hess ◽  
H. Morkoç ◽  
H. Shichijo ◽  
B. G. Streetman
Keyword(s):  
Electron Transfer ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Real Space

Some methods to regulate low-bias negative differential resistance in σ barrier separating nanoscale molecular transport systems

2016 ◽  
Vol 30 (02) ◽  
pp. 1550256 ◽  
Author(s):  
Ji-Mei Shen ◽  
Jing Liu ◽  
Yi Min ◽  
Li-Ping Zhou
Keyword(s):  
Negative Differential Resistance ◽  
Density Functional ◽  
Molecular Transport ◽  
Differential Resistance ◽  
Real Space ◽  
Peak Position ◽  
Transport Systems ◽  
Orbital Interaction ◽  
Potential Applications

Using the first-principles method which combines the nonequilibrium Green’s function (NEGF) with density functional theory (DFT), the role of defect, dopant, barrier length and geometric deformation for low-bias negative differential resistance (NDR) in two capped armchair carbon nanotubes (CNTs) sandwiching [Formula: see text] barrier are systematically analyzed. We found that this method can regulate the negative differential resistance (NDR) effects such as current peak and peak position. The adjusting mechanism may originate from orbital interaction and orbital reconstruction. Our calculations try to manipulate the transport characteristics in energy space by simply manipulating the structure in real space, which may promise the potential applications in nanomolecular-electronics in the future.

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

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