Postgrowth hydrogen treatments of nonradiative defects in low-temperature molecular beam epitaxial Si

1997 ◽  
Vol 70 (3) ◽  
pp. 369-371 ◽  
Author(s):  
W. M. Chen ◽  
I. A. Buyanova ◽  
W.-X. Ni ◽  
G. V. Hansson ◽  
B. Monemar
Keyword(s):  
Low Temperature ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial

Mechanisms of Molecular Beam Epitaxial Growth on Reconstructed Si{100}: Thermal and Energized Beams

1988 ◽  
Vol 141 ◽  
Author(s):  
B. J. Garrison ◽  
M. T. Miller ◽  
D.W. Brenner
Keyword(s):  
Molecular Dynamics ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Molecular Beam ◽  
Energy Deposition ◽  
Amorphous Structure ◽  
Molecular Beam Epitaxial ◽  
Dynamics Simulations ◽  
Molecular Beam Epitaxial Growth

Summary:Molecular dynamics simulations have been performed that examine the microscopic mechanisms of rearrangements of atoms on the Si{ 1001 surface due to deposition of gas phase atoms. For thermal energy deposition we find that the gas atoms initially attach to dangling bonds of the surface dimer atoms. The dimer ’unreconstruction’ is due to a diffusion event on the surface, thus is temperature activated. We also find that dimers may open in regions of the surface where there are several atoms not at lattice sites, thus a low temperature amorphous structure. For 5-10 eV deposition there are direct mechanisms of dimer opening that occur on the 50-100 fs timescale. For energies greater than 15-20 eV there is implantation of the silicon atoms which leads to subsurface damage.

Sign in / Sign up

Export Citation Format

Share Document