Carbonization process for low‐temperature growth of 3C‐SiC by the gas‐source molecular‐beam epitaxial method

1990 ◽  
Vol 68 (1) ◽  
pp. 101-106 ◽  
Author(s):  
Shin‐ichi Motoyama ◽  
Norikazu Morikawa ◽  
Masaaki Nasu ◽  
Shigeo Kaneda
Keyword(s):  
Low Temperature ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Carbonization Process ◽  
Molecular Beam Epitaxial ◽  
Gas Source

Low‐temperature growth of high resistivity GaP by gas‐source molecular beam epitaxy

1992 ◽  
Vol 61 (14) ◽  
pp. 1646-1648 ◽  
Author(s):  
J. Ramdani ◽  
Y. He ◽  
M. Leonard ◽  
N. El‐Masry ◽  
S. M. Bedair
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Resistivity ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gas Source

Structural and Defect Study of Low Temperature INP Grown by Gas Source Molecular Beam Epitaxy

1991 ◽  
Vol 241 ◽  
Author(s):  
J. Ch. Garcia ◽  
J. P. Hirtz ◽  
P. Maurel ◽  
H. J. Von Bardeleben ◽  
J. C. Bourgoin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Group V ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gas Source ◽  
High Concentrations ◽  
Secondary Ion

ABSTRACTThe low temperature growth procedure used in the case of GaAs to introduce high concentrations of deep traps such as arsenic antisite defects has been extended to the growth of InP by gas source molecular beam epitaxy. The low temperature growth of InP induces a strong group V stoechiometric deviation (of the order of +1%). On the other hand, Secondary Ion Mass Spectrometry reveals high levels of hydrogen ranging from 3.1018 to 3.1019 cm−3 depending on growth temperature. Undoped layers are found to be resistive without any post annealing. Annealing experiments above 250°C lead to conductive layers suggesting a passivation effect of both shallow donors and acceptors by hydrogen.

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