Very small oxide-confined vertical-cavity surface-emitting lasers with a bulk active region

1997 ◽  
Vol 70 (6) ◽  
pp. 741-743 ◽  
Author(s):  
H. Deng ◽  
Q. Deng ◽  
D. G. Deppe
Keyword(s):  
Active Region ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

scholarly journals Transient response of vertical-cavity surface-emitting lasers of different active-region diameters

1999 ◽  
Vol 35 (4) ◽  
pp. 608-615 ◽  
Author(s):  
O. Buccafusca ◽  
J.L.A. Chilla ◽  
J.J. Rocca ◽  
P. Brusenbach ◽  
J. Martin-Regalado
Keyword(s):  
Active Region ◽  
Transient Response ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Peaking of Optical Pulses in Vertical-Cavity Surface-Emitting Lasers with an Active Region Based on Submonolayer InGaAs Quantum Dots

2017 ◽  
Vol 43 (12) ◽  
pp. 1099-1101
Author(s):  
V. V. Dudelev ◽  
N. A. Maleev ◽  
A. G. Kuz’menkov ◽  
S. A. Blokhin ◽  
V. Yu. Myl’nikov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Cavity Surface ◽  
Optical Pulses ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

scholarly journals Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions

1998 ◽  
Vol 3 ◽  
Author(s):  
Pawe ,Ma kowiak ◽  
W ,odzimierz Nakwaski
Keyword(s):  
Active Region ◽  
Active Regions ◽  
Optimal Number ◽  
Cavity Surface ◽  
Optical Losses ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Scattering Losses

A detailed threshold analysis of room-temperature pulsed operation of GaN/AlGaN/AlN vertical-cavity surface-emitting lasers (VCSELs) is carried out. The model takes advantage of the latest results concerning gain in active regions, material absorption in the cladding layers, as well as cavity diffraction and scattering losses. The simulation showed that although VCSELs with single (S) or multiple (M) quantum-well (QW) active regions exhibit lower threshold currents, they are much more sensitive to any increase in optical losses than their bulk counterparts. In particular, decreasing the active region radius of gain-guided QW VCSELs below 5 μm (which increases diffraction losses) or increasing dislocation densities (which, in turn, raises scattering losses) gives an enormous rise to their threshold currents. Therefore small-size GaN VCSELs should have an index-guided structure. In the case of MQW VCSELs, the optimal number of quantum wells strongly depends on the reflectivities of resonator mirrors. According to our study, MQW GaN lasers usually require noticeably lower threshold currents compared to SQW lasers. The optimal number of QW active layers is lower in laser structures exhibiting lower optical losses. Although the best result occurred for an active region thickness of 4 nm, threshold currents for the various sizes differ insignificantly.

scholarly journals Vertical cavity surface emitting lasers of 1.3 μm spectral range based on the InGaAs/InGaAlAs superlattice

2021 ◽  
Vol 2103 (1) ◽  
pp. 012176
Author(s):  
S S Rochas ◽  
L Karachinsky Ya ◽  
A V Babichev ◽  
I I Novikov ◽  
A G Gladyshev ◽  
...  
Keyword(s):  
Active Region ◽  
Spectral Range ◽  
Threshold Current ◽  
Cavity Surface ◽  
Wafer Fusion ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Small Signal Modulation

Abstract Vertical-cavity surface-emitting lasers of 1.3 μm spectral range with the active region based on the InGaAs/InGaAlAs superlattice were studied. VCSEL heterostructure was formed by a wafer-fusion of the heterostructure with an active region and two DBRs grown by molecular-beam epitaxy on InP and GaAs substrates respectively. Fabricated VCSELs have shown threshold current below 1.6 mA and frequency of small signal modulation near 9 GHz at 20°C.

scholarly journals Высокоскоростные полупроводниковые вертикально-излучающие лазеры для оптических систем передачи данных (Обзор)

2018 ◽  
Vol 44 (1) ◽  
pp. 7
Author(s):  
С.А. Блохин ◽  
Н.А. Малеев ◽  
М.А. Бобров ◽  
А.Г. Кузьменков ◽  
А.В. Сахаров ◽  
...  
Keyword(s):  
Active Region ◽  
Semiconductor Lasers ◽  
High Speed ◽  
Cavity Surface ◽  
Modulation Format ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Internal Properties ◽  
Vertical Cavity

AbstractThe main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called “vertical-cavity surface-emitting lasers”) under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ∼30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

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