Excited states of individual quantum dots studied by photoluminescence spectroscopy

1996 ◽  
Vol 69 (6) ◽  
pp. 749-751 ◽  
Author(s):  
D. Hessman ◽  
P. Castrillo ◽  
M.‐E. Pistol ◽  
C. Pryor ◽  
L. Samuelson
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Photoluminescence Spectroscopy

scholarly journals Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 640
Author(s):  
Artem I. Khrebtov ◽  
Vladimir V. Danilov ◽  
Anastasia S. Kulagina ◽  
Rodion R. Reznik ◽  
Ivan D. Skurlov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Molecular Beam ◽  
Surface Passivation ◽  
Low Energy ◽  
Trioctylphosphine Oxide ◽  
Reverse Transfer ◽  
Semiconductor Heterostructure ◽  
Ligand Type

The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array of InP nanowires (NWs) with InAsP nanoinsertion grown by Au-assisted molecular beam epitaxy on Si (111) substrates, was investigated. A significant dependence of the photoluminescence (PL) dynamics of the InAsP insertions on the ligand type was shown, which was associated with the changes in the excitation translation channels in the heterostructure. This change was caused by a different interaction of the ligand shells with the surface of InP NWs, which led to the formation of different interfacial low-energy states at the NW-ligand boundary, such as surface-localized antibonding orbitals and hybridized states that were energetically close to the radiating state and participate in the transfer of excitation. It was shown that the quenching of excited states associated with the capture of excitation to interfacial low-energy traps was compensated by the increasing role of the “reverse transfer” mechanism. As a result, the effectiveness of TOPO-CdSe/ZnS QDs as a novel surface passivation coating was demonstrated.

Well-defined excited states of self-assembled InAs∕InAlGaAs quantum dots on InP (001)

2005 ◽  
Vol 87 (5) ◽  
pp. 053102 ◽  
Author(s):  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Sung Ui Hong ◽  
Ho-Sang Kwack ◽  
Byung Seok Choi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Self Assembled

Photoluminescence Spectroscopy of Single CdSe Nanocrystallite Quantum Dots

1996 ◽  
Vol 77 (18) ◽  
pp. 3873-3876 ◽  
Author(s):  
S. A. Empedocles ◽  
D. J. Norris ◽  
M. G. Bawendi
Keyword(s):  
Quantum Dots ◽  
Photoluminescence Spectroscopy

Mode assignment of excited states in self-assembled InAs/GaAs quantum dots

1998 ◽  
Vol 58 (11) ◽  
pp. 7181-7187 ◽  
Author(s):  
Susumu Noda ◽  
Tomoki Abe ◽  
Masatoshi Tamura
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Self Assembled ◽  
Mode Assignment

Excited states and selection rules in self-assembled InAs/GaAs quantum dots

1999 ◽  
Vol 60 (4) ◽  
pp. R2185-R2188 ◽  
Author(s):  
I. E. Itskevich ◽  
M. S. Skolnick ◽  
D. J. Mowbray ◽  
I. A. Trojan ◽  
S. G. Lyapin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Selection Rules ◽  
Self Assembled

Excited states of modified oxygen-deficient centers and Si quantum dots in Gd-implanted silica glasses: Emission dynamics and lifetime distributions

2021 ◽  
Author(s):  
Anatoly Zatsepin ◽  
Yulia Kuznetsova ◽  
Elena Trofimova ◽  
Vladimir A Pustovarov
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Excited States ◽  
Lifetime Distributions ◽  
Time Resolved ◽  
Silica Glasses ◽  
Pulsed Cathodoluminescence ◽  
Si Quantum Dots

The emission centers and excited states characteristics in silica glasses implanted with Gd ions were studied by time-resolved pulsed cathodoluminescence. It was found that in the process of ion implantation,...

Photoluminescence energy trend for ground and excited states in InAs quantum dots in a well InGaAs/GaAs structures

2007 ◽  
Vol 4 (2) ◽  
pp. 272-275 ◽  
Author(s):  
E. Velazquez Lozada ◽  
T. V. Torchynska ◽  
M. Dybiec ◽  
S. Ostapenko ◽  
P. G. Eliseev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Inas Quantum Dots

Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots

2009 ◽  
Vol 6 (4) ◽  
pp. 853-856 ◽  
Author(s):  
K. Neudert ◽  
F. Trojánek ◽  
K. Kuldová ◽  
J. Oswald ◽  
A. Hospodková ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photoluminescence Spectroscopy
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