scholarly journals Temperature dependence of inter-dot electron-spin transfer among laterally coupled excited states in high-density InGaAs quantum dots

2020 ◽  
Vol 127 (4) ◽  
pp. 043904 ◽  
Author(s):  
Shino Sato ◽  
Satoshi Hiura ◽  
Junichi Takayama ◽  
Akihiro Murayama
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Excited States ◽  
Electron Spin ◽  
High Density ◽  
Spin Transfer

Temperature dependence of the optical properties of high-density GaAs quantum dots

2012 ◽  
Vol 60 (9) ◽  
pp. 1428-1432 ◽  
Author(s):  
Ryan P. Smith ◽  
Jong Su Kim ◽  
Sang Jun Lee ◽  
Sam Kyu Noh ◽  
Jin Soo Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Temperature Dependence ◽  
High Density

scholarly journals Interdot spin transfer dynamics in laterally coupled excited spin ensemble of high-density InGaAs quantum dots

2018 ◽  
Vol 113 (2) ◽  
pp. 023104 ◽  
Author(s):  
Satoshi Hiura ◽  
Kazuki Takeishi ◽  
Masayuki Urabe ◽  
Kodai Itabashi ◽  
Junichi Takayama ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Density ◽  
Spin Transfer

scholarly journals Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 640
Author(s):  
Artem I. Khrebtov ◽  
Vladimir V. Danilov ◽  
Anastasia S. Kulagina ◽  
Rodion R. Reznik ◽  
Ivan D. Skurlov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Molecular Beam ◽  
Surface Passivation ◽  
Low Energy ◽  
Trioctylphosphine Oxide ◽  
Reverse Transfer ◽  
Semiconductor Heterostructure ◽  
Ligand Type

The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array of InP nanowires (NWs) with InAsP nanoinsertion grown by Au-assisted molecular beam epitaxy on Si (111) substrates, was investigated. A significant dependence of the photoluminescence (PL) dynamics of the InAsP insertions on the ligand type was shown, which was associated with the changes in the excitation translation channels in the heterostructure. This change was caused by a different interaction of the ligand shells with the surface of InP NWs, which led to the formation of different interfacial low-energy states at the NW-ligand boundary, such as surface-localized antibonding orbitals and hybridized states that were energetically close to the radiating state and participate in the transfer of excitation. It was shown that the quenching of excited states associated with the capture of excitation to interfacial low-energy traps was compensated by the increasing role of the “reverse transfer” mechanism. As a result, the effectiveness of TOPO-CdSe/ZnS QDs as a novel surface passivation coating was demonstrated.

Temperature dependence of photoluminescence spectra of self-organized CdSe quantum dots

2000 ◽  
Vol 214-215 ◽  
pp. 770-773 ◽  
Author(s):  
Yasuhiro Murase ◽  
Takeshi Ota ◽  
Nobuhiro Yasui ◽  
Akihiro Shikimi ◽  
Tsuguki Noma ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Cdse Quantum Dots ◽  
Photoluminescence Spectra ◽  
Self Organized

Well-defined excited states of self-assembled InAs∕InAlGaAs quantum dots on InP (001)

2005 ◽  
Vol 87 (5) ◽  
pp. 053102 ◽  
Author(s):  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Sung Ui Hong ◽  
Ho-Sang Kwack ◽  
Byung Seok Choi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Self Assembled
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