scholarly journals Optical near‐field lithography on hydrogen‐passivated silicon surfaces

1996 ◽  
Vol 69 (4) ◽  
pp. 544-546 ◽  
Author(s):  
Steen Madsen ◽  
Matthias Müllenborn ◽  
Karen Birkelund ◽  
François Grey
Keyword(s):  
Near Field ◽  
Silicon Surfaces ◽  
Passivated Silicon

scholarly journals Oxidation of hydrogen-passivated silicon surfaces by scanning near-field optical lithography using uncoated and aluminum-coated fiber probes

1997 ◽  
Vol 82 (1) ◽  
pp. 49-53 ◽  
Author(s):  
S. Madsen ◽  
S. I. Bozhevolnyi ◽  
K. Birkelund ◽  
M. Müllenborn ◽  
J. M. Hvam ◽  
...  
Keyword(s):  
Near Field ◽  
Optical Lithography ◽  
Silicon Surfaces ◽  
Coated Fiber ◽  
Oxidation Of Hydrogen ◽  
Fiber Probes ◽  
Passivated Silicon

Bromine functionalized molecular adlayers on hydrogen passivated silicon surfaces

2006 ◽  
Vol 326 (1) ◽  
pp. 144-150 ◽  
Author(s):  
R. Basu ◽  
C.R. Kinser ◽  
J.D. Tovar ◽  
M.C. Hersam
Keyword(s):  
Silicon Surfaces ◽  
Passivated Silicon

Laser assisted field induced oxide nanopatterning of hydrogen passivated silicon surfaces

2007 ◽  
Vol 91 (7) ◽  
pp. 073110 ◽  
Author(s):  
L. S. C. Pingree ◽  
M. J. Schmitz ◽  
D. E. Kramer ◽  
M. C. Hersam
Keyword(s):  
Silicon Surfaces ◽  
Passivated Silicon

scholarly journals Monolayer Doping of Silicon through Grafting a Tailored Molecular Phosphorus Precursor onto Oxide-Passivated Silicon Surfaces

2016 ◽  
Vol 28 (11) ◽  
pp. 3634-3640 ◽  
Author(s):  
Thibault Alphazan ◽  
Laurent Mathey ◽  
Martin Schwarzwälder ◽  
Tsung-Han Lin ◽  
Aaron J. Rossini ◽  
...  
Keyword(s):  
Silicon Surfaces ◽  
Phosphorus Precursor ◽  
Passivated Silicon

Charge carrier trapping at passivated silicon surfaces

2011 ◽  
Vol 109 (6) ◽  
pp. 064505 ◽  
Author(s):  
Johannes Seiffe ◽  
Marc Hofmann ◽  
Jochen Rentsch ◽  
Ralf Preu
Keyword(s):  
Charge Carrier ◽  
Silicon Surfaces ◽  
Carrier Trapping ◽  
Passivated Silicon ◽  
Charge Carrier Trapping

Electronic structure and band alignment of 9,10-phenanthrenequinone passivated silicon surfaces

2011 ◽  
Vol 605 (13-14) ◽  
pp. 1308-1312 ◽  
Author(s):  
Sushobhan Avasthi ◽  
Yabing Qi ◽  
Grigory K. Vertelov ◽  
Jeffrey Schwartz ◽  
Antoine Kahn ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Alignment ◽  
Silicon Surfaces ◽  
Passivated Silicon

Near-Field Radiation Calculated With an Improved Dielectric Function Model for Doped Silicon

2008 ◽  
Author(s):  
S. Basu ◽  
B. J. Lee ◽  
Z. M. Zhang
Keyword(s):  
Energy Transfer ◽  
Dielectric Function ◽  
Near Field ◽  
Silicon Surfaces ◽  
Function Model ◽  
Fluctuation Dissipation ◽  
Doped Silicon ◽  
Energy Conversion Systems ◽  
Field Radiation ◽  
Vacuum Gap

This paper describes a theoretical investigation of near-field radiative heat transfer between doped silicon surfaces separated by a vacuum gap. Using an improved dielectric function model for heavily doped silicon, along with fluctuation-dissipation theorem, and dyadic Green’s function, the present authors calculated the energy transfer between the doped silicon surfaces near room temperature. The effects of doping level, polarization, and width of the vacuum gap on the overall radiative transfer were investigated. It was observed that increase in the doping concentration of the emitter does not necessarily enhance the energy transfer in the near field. The energy-streamline method was used to model the lateral shift of the energy pathway, which is the trace of the Poynting vectors in the vacuum gap. The analysis performed in this study may facilitate the understanding of near-field radiation for applications such as thermal management in nanoelectronics, energy conversion systems, and nanothermal manufacturing.

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