Room‐temperature electroluminescence from Si/Ge/Si1−xGex quantum‐well diodes grown by molecular‐beam epitaxy

1996 ◽  
Vol 69 (16) ◽  
pp. 2376-2378 ◽  
Author(s):  
H. Presting ◽  
T. Zinke ◽  
A. Splett ◽  
H. Kibbel ◽  
M. Jaros
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam

Near Room Temperature CW Operation of 660 nm Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 24 (Part 2, No. 12) ◽  
pp. L911-L913 ◽  
Author(s):  
Hidetoshi Iwamura ◽  
Tadashi Saku ◽  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Cw Operation ◽  
Multi Quantum Well

Correlation Between the Quantized Energies and the Photovoltaic Spectra for a GaAs/A1GaAs Quantum Well Structure

1996 ◽  
Vol 426 ◽  
Author(s):  
O. L. Russo ◽  
V. Rehn ◽  
T. W. Nee ◽  
K. A. Dumas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Energy Range ◽  
Room Temperature ◽  
Molecular Beam ◽  
Optical Transitions ◽  
Quantum Well Structure ◽  
Adjacent Line

AbstractWe have measured the photovoltaic spectra at 300K for a PIN GaAs/AlGaAs structure containing five coupled wells (50A/28A) grown by molecular beam epitaxy (MBE). The spectra were obtained in the energy range from 1.40 eV to 1.60 eV. This is the region in which optical transitions between the sub-band valence and conduction states are possible. Five direct optical transitions are allowed for this structure. These transitions are normally difficult to measure at room temperature because of broadening, nevertheless, some of the allowed transitions were observed from the photovoltaic spectra and agreed with calculations. We have previously shown that measurements made using electroreflectance (ER) agree with these results. However, with ER, three possible transitions were observed but only one with certainty, possibly because of interference caused by adjacent line spectra interaction. This interference appears to be less pronounced in the photovoltaic spectra, which aids in the identification of transitions.

scholarly journals Fabrication of AlGaInP/GaInP Laser Diodes by Molecular Beam Epitaxy

1997 ◽  
Vol 19 (4) ◽  
pp. 239-246
Author(s):  
K. K. Wu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Full Width Half Maximum ◽  
Laser Diodes ◽  
Gas Source ◽  
Visible Laser ◽  
Grade Index ◽  
Lattice Matched

Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated. In this report, two kinds of laser structures, the lattice-matched quantum well double heterostructure (DH) and the grade-index separate- confinement heterostructure (GRIN-SCH) stained quantum well structure are characterized. Measurements of photoluminescence (PL) intensity, L-I curves and wavelength spectra of these two structures all exhibit lasing properties. At room temperature, it is found that induced lasing phenomena has a full width half maximum (FWHM) of 2.1 nm and 0.5 nm, respectively. The emitting wavelengths range from 6500 Å to 6850 Å.

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