Photoluminescence study of initial interdiffusion of SiGe/Si quantum wells grown by ultrahigh vacuum‐chemical vapor deposition

1996 ◽  
Vol 69 (10) ◽  
pp. 1444-1446 ◽  
Author(s):  
H. Lafontaine ◽  
D. C. Houghton ◽  
N. L. Rowell ◽  
G. C. Aers
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Photoluminescence Study

Properties of Si1 − x − y Ge x  C  y Epitaxial Films Grown by Ultrahigh Vacuum Chemical Vapor Deposition

1999 ◽  
Vol 146 (12) ◽  
pp. 4611-4618 ◽  
Author(s):  
S. John ◽  
E. J. Quinones ◽  
B. Ferguson ◽  
S. K. Ray ◽  
B. Anantharam ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Epitaxial Films

Characteristics of polycrystalline films grown by ultrahigh vacuum chemical vapor deposition system

1995 ◽  
Vol 38 (12) ◽  
pp. 2029-2033
Author(s):  
Hsiao-Yi Lin ◽  
Tan Fu Lei ◽  
Horng-Chih Lin ◽  
Chun-Yen Chang ◽  
Ruey-Ching Twu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Polycrystalline Films

Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 1, No.1A) ◽  
pp. 240-246 ◽  
Author(s):  
Tz-Guei Jung ◽  
Chun-Yen Chang ◽  
Ting-Chang Chang ◽  
Horng-Chih Lin ◽  
Tom Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Germanium Alloy
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