Highly insulative barium zirconate‐titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications

1996 ◽  
Vol 69 (18) ◽  
pp. 2659-2661 ◽  
Author(s):  
T. B. Wu ◽  
C. M. Wu ◽  
M. L. Chen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Rf Magnetron Sputtering ◽  
Dynamic Random Access Memory ◽  
Barium Zirconate ◽  
Access Memory ◽  
Barium Zirconate Titanate ◽  
Memory Applications

(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications

1999 ◽  
Vol 74 (21) ◽  
pp. 3194-3196 ◽  
Author(s):  
B. Nagaraj ◽  
T. Sawhney ◽  
S. Perusse ◽  
S. Aggarwal ◽  
R. Ramesh ◽  
...  
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Access Memory ◽  
Memory Applications
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