On surface plasmons in porous silicon: Measurements of the electron energy loss in etched silicon nanocrystals

1996 ◽  
Vol 69 (2) ◽  
pp. 206-208 ◽  
Author(s):  
R. Massami Sassaki ◽  
F. Galembeck ◽  
O. Teschke
2008 ◽  
Vol 104 (8) ◽  
pp. 084318 ◽  
Author(s):  
Paul R. Coxon ◽  
Yimin Chao ◽  
Benjamin R. Horrocks ◽  
Mhairi Gass ◽  
Ursel Bangert ◽  
...  

Author(s):  
M. R. Scheinfein

There has been considerable interest in characterizing the electronic and chemical properties of interfaces and grain boundries at high spatial resolution. This abstract describes a technique which utilizes the energy dispersion of surface plasmons in the transmission electron energy loss spectrum to evaluate the local dielectric constant variation across interfaces. This technique is shown to yield extremely high spatial resolution.We have been conducting studies of interfaces in a VG HB-5 STEM located at NRRFSS which is equipped with a high resolution electron energy loss analyzer. In STEM, using small probes, a typical surface plasmon excited by 100 keV electrons (Al for example) reaches its asymptotic energy value at a scattering angle between.3 and.4 mr. Since we are convoluting the incident angular distribution with the surface plasmon intensities integrated over a collection aperture, the surface plasmon excitation energies are given by their asymptotic (in k-space) energy values. These asymptotic energy excitations are very sensitive functions of the thickness and dielectric constant [eg, 2-5] of the surrounding medium.


2000 ◽  
Vol 294-296 ◽  
pp. 867-870 ◽  
Author(s):  
Frank Schmithüsen ◽  
Marc De Boissieu ◽  
Michel Boudard ◽  
Joël Chevrier ◽  
Fabio Comin

2016 ◽  
Vol 67 (1) ◽  
pp. 331-357 ◽  
Author(s):  
Charles Cherqui ◽  
Niket Thakkar ◽  
Guoliang Li ◽  
Jon P. Camden ◽  
David J. Masiello

Sign in / Sign up

Export Citation Format

Share Document