Stability of a low‐temperature grown GaAs surface layer following air exposure using tunneling microscopy

1996 ◽  
Vol 68 (16) ◽  
pp. 2258-2260 ◽  
Author(s):  
S. Hong ◽  
R. Reifenberger ◽  
D. B. Janes ◽  
D. McInturff ◽  
J. M. Woodall
Keyword(s):  
Surface Layer ◽  
Low Temperature ◽  
Gaas Surface ◽  
Tunneling Microscopy ◽  
Air Exposure ◽  
Low Temperature Grown Gaas

Terahertz radiation from n-type GaAs with Be-doped low-temperature-grown GaAs surface layers

2003 ◽  
Vol 94 (5) ◽  
pp. 3651-3653 ◽  
Author(s):  
Kai Liu ◽  
Arunas Krotkus ◽  
K. Bertulis ◽  
Jingzhou Xu ◽  
X.-C. Zhang
Keyword(s):  
Low Temperature ◽  
Terahertz Radiation ◽  
Gaas Surface ◽  
Surface Layers ◽  
Low Temperature Grown Gaas

A scanning tunneling microscopy study of low-temperature grown GaAs

1993 ◽  
Vol 22 (12) ◽  
pp. 1383-1386 ◽  
Author(s):  
K. Pond ◽  
J. Ibbetson ◽  
R. Maboudian ◽  
V. Bressler-Hill ◽  
W. H. Weinberg ◽  
...  
Keyword(s):  
Low Temperature ◽  
Scanning Tunneling Microscopy ◽  
Microscopy Study ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Scanning Tunneling Microscopy Study ◽  
Low Temperature Grown Gaas

scholarly journals Laser-Combined Scanning Tunneling Microscopy on the Carrier Dynamics in Low-Temperature-Grown GaAs/AlGaAs/GaAs

2011 ◽  
Vol 2011 ◽  
pp. 1-9 ◽  
Author(s):  
Yasuhiko Terada ◽  
Shoji Yoshida ◽  
Osamu Takeuchi ◽  
Hidemi Shigekawa
Keyword(s):  
Low Temperature ◽  
Scanning Tunneling Microscopy ◽  
Temporal Resolution ◽  
Scanning Tunneling ◽  
High Temporal Resolution ◽  
Tunneling Microscopy ◽  
Recombination Lifetime ◽  
Recombination Lifetimes ◽  
Low Temperature Grown Gaas ◽  
Lt Gaas

We investigated carrier recombination dynamics in a low-temperature-grown GaAs (LT-GaAs)/AlGaAs/GaAs heterostructure by laser-combined scanning tunneling microscopy, shaken-pulse-pair-excited STM (SPPX-STM). With the AlGaAs interlayer as a barrier against the flow of photocarriers, recombination lifetimes in LT-GaAs of 4.0 ps and GaAs of 4.8 ns were successfully observed separately. We directly demonstrated the high temporal resolution of SPPX-STM by showing the recombination lifetime of carriers in LT-GaAs (4.0 ps) in the range of subpicosecond temporal resolution. In the carrier-lifetime-mapping measurement, a blurring of recombination lifetime up to 50 nm was observed at the LT-GaAs/AlGaAs boundary, which was discussed in consideration of the screening length of the electric field from the STM probe. The effect of the built-in potential on the signal, caused by the existence of LT-GaAs/AlGaAs/GaAs boundaries, was discussed in detail.

Ultrafast photoconductors from low-temperature-grown GaAs for terahertz components activated by femtosecond 1-μm wavelength laser pulses

2012 ◽  
Vol 9 (7) ◽  
pp. 1693-1695
Author(s):  
Juozas Adamonis ◽  
Klemensas Bertulis ◽  
Andrius Bičiūnas ◽  
Ramūnas Adomavičius ◽  
Arūnas Krotkus
Keyword(s):  
Low Temperature ◽  
Laser Pulses ◽  
Low Temperature Grown Gaas

Interaction of localized spins in low-temperature-grown GaAs layers

2010 ◽  
Vol 405 (19) ◽  
pp. 4133-4138 ◽  
Author(s):  
D.W. Jung ◽  
J.P. Noh ◽  
N. Otsuka
Keyword(s):  
Low Temperature ◽  
Low Temperature Grown Gaas
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