scholarly journals Erratum: ‘‘Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy’’ [Appl. Phys. Lett. 67, 1865 (1995)]

1996 ◽  
Vol 68 (8) ◽  
pp. 1168-1169 ◽  
Author(s):  
J. Kolodzey ◽  
P. A. O’Neil ◽  
S. Zhang ◽  
B. A. Orner ◽  
K. Roe ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Substrates

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

Cost-effective selective-area growth of GaN-based nanocolumns on silicon substrates by molecular-beam epitaxy

2019 ◽  
Vol 514 ◽  
pp. 124-129
Author(s):  
Yukun Zhao ◽  
Wenxian Yang ◽  
Shulong Lu ◽  
Yuanyuan Wu ◽  
Xin Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cost Effective ◽  
Silicon Substrates ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

scholarly journals Doping of GaP layers grown by molecular-beam epitaxy on silicon substrates

2018 ◽  
Vol 1124 ◽  
pp. 022022 ◽  
Author(s):  
A A Lazarenko ◽  
M S Sobolev ◽  
E V Pirogov ◽  
E V Nikitina
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Substrates

scholarly journals Epitaxial La0.7 Sr0.3 MnO3 thin films grown on SrTiO3 buffered silicon substrates by reactive molecular-beam epitaxy

2012 ◽  
Vol 209 (6) ◽  
pp. 1090-1095 ◽  
Author(s):  
L. Méchin ◽  
C. Adamo ◽  
S. Wu ◽  
B. Guillet ◽  
S. Lebargy ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Substrates

A Model for the Growth of AlN Films on Silicon Substrates by Plasma-Assisted Molecular Beam Epitaxy

2002 ◽  
Vol 5 (7) ◽  
pp. G54 ◽  
Author(s):  
Sung-Ui Hong ◽  
Gee-Pyeong Han ◽  
Mun-Cheol Paek ◽  
Kyung-Ik Cho ◽  
Soon-Gil Yoon
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Substrates

scholarly journals Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

Nanoscale ◽  
2013 ◽  
Vol 5 (16) ◽  
pp. 7410 ◽  
Author(s):  
Katarzyna Gas ◽  
Janusz Sadowski ◽  
Takeshi Kasama ◽  
Aloyzas Siusys ◽  
Wojciech Zaleszczyk ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Structural And Optical Properties
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