Electronic properties of defects introduced during low‐energy He‐ion bombardment of epitaxially grown n‐GaAs

1996 ◽  
Vol 68 (23) ◽  
pp. 3275-3277 ◽  
Author(s):  
F. D. Auret ◽  
S. A. Goodman
Keyword(s):  
Electronic Properties ◽  
Ion Bombardment ◽  
Low Energy

Electrical Characterization Of Defects Introduced During Plasma-Based Processing Of GaAs

1996 ◽  
Vol 442 ◽  
Author(s):  
F. D. Auret ◽  
G. Myburg ◽  
W. E. Meyer ◽  
P. N. K. Deenapanray ◽  
H. Nordhoff ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Electrical Characterization ◽  
Ion Bombardment ◽  
High Energy ◽  
Wet Etching ◽  
Low Energy ◽  
Characteristic Set ◽  
Si Doped ◽  
Metastable Defect

AbstractDLTS revealed that each plasma type (He and SiCl4) introduced its own characteristic set of defects. Some of the defects created during He processing and one defect introduced by SiCl4 etching had identical electronic properties to those introduced during high energy (MeV) He ion bombardment. SiC14etching introduced only two prominent defects, one of which is metastable with electronic properties similar to a metastable defect previously reported in high and low energy He-ion bombardment of Si-doped GaAs. IV measurements demonstrated that the characteristics of SBDs fabricated on He-ion processed surfaces were very poor compared to those of control diodes (diodes fabricated on surfaces cleaned by conventional wet etching). In contrast, the properties of SBDs fabricated on SiCl4 etched surfaces were as good as, and in some cases superior to, those of control diodes. SBDs fabricated on annealed (at 450°C for 30 minutes) He-processed samples exhibited improved but still poor rectification. In contrast, SBDs fabricated on annealed SiCl4 etched surfaces had virtually the same characteristics as those fabricated on unannealed SiCl4 etched samples.

Preliminary Results of Low Energy Sputter Yields of Boron Nitride due to Xenon Ion Bombardment (Preprint)

2008 ◽  
Author(s):  
James L. Topper ◽  
Binyamin Rubin ◽  
Cody C. Farnell ◽  
Azer P. Yalin
Keyword(s):  
Boron Nitride ◽  
Ion Bombardment ◽  
Low Energy ◽  
Preliminary Results

scholarly journals Evolution of plasmonic nanostructures under ultra-low-energy ion bombardment

2021 ◽  
Vol 544 ◽  
pp. 148672
Author(s):  
Lionel Simonot ◽  
Florian Chabanais ◽  
Sophie Rousselet ◽  
Frédéric Pailloux ◽  
Sophie Camelio ◽  
...  
Keyword(s):  
Ion Bombardment ◽  
Low Energy ◽  
Plasmonic Nanostructures

On the defect structure due to low energy ion bombardment of graphite

1995 ◽  
Vol 326 (3) ◽  
pp. L489-L493 ◽  
Author(s):  
D. Marton ◽  
H. Bu ◽  
K.J. Boyd ◽  
S.S. Todorov ◽  
A.H. Al-Bayati ◽  
...  
Keyword(s):  
Defect Structure ◽  
Ion Bombardment ◽  
Low Energy

Argon incorporation and silicon carbide formation during low energy argon‐ion bombardment of Si(100)

1996 ◽  
Vol 79 (6) ◽  
pp. 2934-2941 ◽  
Author(s):  
J. S. Pan ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
H. S. Tan ◽  
K. L. Tan
Keyword(s):  
Silicon Carbide ◽  
Ion Bombardment ◽  
Low Energy ◽  
Carbide Formation ◽  
Argon Ion Bombardment ◽  
Argon Ion
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