Peak‐to‐valley ratio of small resonant‐tunneling diodes with various barrier‐thickness asymmetries

T. Schmidt; M. Tewordt; R. J. Haug; K. v. Klitzing; B. Schönherr; P. Grambow; A. Förster; H. Lüth

doi:10.1063/1.116550

Peak‐to‐valley ratio of small resonant‐tunneling diodes with various barrier‐thickness asymmetries

Applied Physics Letters ◽

10.1063/1.116550 ◽

1996 ◽

Vol 68 (6) ◽

pp. 838-840 ◽

Cited By ~ 18

Author(s):

T. Schmidt ◽

M. Tewordt ◽

R. J. Haug ◽

K. v. Klitzing ◽

B. Schönherr ◽

...

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Barrier Thickness ◽

Tunneling Diodes ◽

Peak To Valley Ratio

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Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes

10.1109/cornel.1989.79844 ◽

2003 ◽

Author(s):

H. Mizuta ◽

T. Tanoue ◽

S. Takahashi

Keyword(s):

Theoretical Analysis ◽

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Tunneling Diodes ◽

Peak To Valley Ratio

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Quantum well width and barrier Thickness effects on the perpendicular transport in polar and non-polar oriented AlGaN/GaN Resonant Tunneling Diodes

2021 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS) ◽

10.1109/dts52014.2021.9498223 ◽

2021 ◽

Author(s):

Nafaa Kacem ◽

Amel Bhouri ◽

Jean-Louis Lazzari ◽

Nejeh Jaba

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Barrier Thickness ◽

Tunneling Diodes ◽

Quantum Well Width

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Photoemission oscillation measurement of barrier thickness for InAs/AlSb resonant tunneling diodes

Applied Physics Letters ◽

10.1063/1.116095 ◽

1996 ◽

Vol 68 (10) ◽

pp. 1406-1408 ◽

Cited By ~ 4

Author(s):

J. J. Zinck ◽

D. H. Chow ◽

J. N. Schulman ◽

H. L. Dunlap

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Barrier Thickness ◽

Tunneling Diodes

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Effect of barrier thickness asymmetries on the electrical characteristics of AlAs/GaAs double barrier resonant tunneling diodes

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586410 ◽

1992 ◽

Vol 10 (2) ◽

pp. 1042 ◽

Cited By ~ 7

Author(s):

A. J. Tsao

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Electrical Characteristics ◽

Barrier Thickness ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Enhancement of current peak‐to‐valley ratio in In0.52Al0.48As/In0.53Ga0.47As ‐based resonant tunneling diodes

Journal of Applied Physics ◽

10.1063/1.340278 ◽

1988 ◽

Vol 63 (12) ◽

pp. 5875-5876 ◽

Cited By ~ 7

Author(s):

Robert C. Potter ◽

Amir A. Lakhani ◽

Dana Beyea ◽

Harry Hier

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Tunneling Diodes ◽

Peak To Valley Ratio

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Influence of the barrier thickness on the noise performance of AlAs/GaAs/AlAs double barrier resonant tunneling diodes

Journal of Applied Physics ◽

10.1063/1.359187 ◽

1995 ◽

Vol 77 (11) ◽

pp. 6026-6030 ◽

Cited By ~ 4

Author(s):

A. Ouacha ◽

M. Willander ◽

H. Brugger ◽

U. Meiners

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Noise Performance ◽

Barrier Thickness ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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resonant tunneling diodes: The dependence of the peak-to-valley current ratio on barrier thickness and height

Superlattices and Microstructures ◽

10.1016/0749-6036(89)90077-3 ◽

1989 ◽

Vol 5 (1) ◽

pp. 109-113 ◽

Cited By ~ 13

Author(s):

Jan Söderström ◽

Thorwald G. Andersson

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Barrier Thickness ◽

Current Ratio ◽

Tunneling Diodes

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Lattice matched and pseudomorphic In0.53Ga0.47As/InxAl1−xAs resonant tunneling diodes with high current peak‐to‐valley ratio for millimeter‐wave power generation

Journal of Applied Physics ◽

10.1063/1.345472 ◽

1990 ◽

Vol 67 (5) ◽

pp. 2643-2646 ◽

Cited By ~ 6

Author(s):

Imran Mehdi ◽

George Haddad

Keyword(s):

Power Generation ◽

Millimeter Wave ◽

Resonant Tunneling ◽

Wave Power ◽

Resonant Tunneling Diodes ◽

High Current ◽

Tunneling Diodes ◽

Lattice Matched ◽

Peak To Valley Ratio ◽

Wave Power Generation

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Barrier thickness dependence of peak current density in GaInAs/AlAs/InP resonant tunneling diodes by MOVPE

Solid-State Electronics ◽

10.1016/s0038-1101(99)00079-9 ◽

1999 ◽

Vol 43 (8) ◽

pp. 1395-1398 ◽

Cited By ~ 13

Author(s):

Y Miyamoto ◽

H Tobita ◽

K Oshima ◽

K Furuya

Keyword(s):

Current Density ◽

Resonant Tunneling ◽

Thickness Dependence ◽

Resonant Tunneling Diodes ◽

Barrier Thickness ◽

Peak Current Density ◽

Peak Current ◽

Tunneling Diodes

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Single-electron transport in small resonant-tunneling diodes with various barrier-thickness asymmetries

Physical Review B ◽

10.1103/physrevb.55.2230 ◽

1997 ◽

Vol 55 (4) ◽

pp. 2230-2236 ◽

Cited By ~ 21

Author(s):

T. Schmidt ◽

R. J. Haug ◽

K. v. Klitzing ◽

A. Förster ◽

H. Lüth

Keyword(s):

Electron Transport ◽

Resonant Tunneling ◽

Single Electron ◽

Resonant Tunneling Diodes ◽

Barrier Thickness ◽

Tunneling Diodes ◽

Single Electron Transport

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