Mechanisms of band‐edge emission in Mg‐doped p‐type GaN

1996 ◽  
Vol 68 (14) ◽  
pp. 1883-1885 ◽  
Author(s):  
M. Smith ◽  
G. D. Chen ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
A. Salvador ◽  
...  
Keyword(s):  
Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
P Type ◽  
Mg Doped

Liquid‐phase epitaxy of heavily Mg‐doped GaAs: Formation of a new near‐band‐edge emission exclusively pertinent to acceptor impurities

1987 ◽  
Vol 62 (8) ◽  
pp. 3212-3215 ◽  
Author(s):  
Masahiko Mori ◽  
Yunosuke Makita ◽  
Yoshio Okada ◽  
Nobukazu Ohnishi ◽  
Yoshinobu Mitsuhashi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Mg Doped

Blueshift of near band edge emission in Mg doped ZnO thin films and aging

2004 ◽  
Vol 95 (9) ◽  
pp. 4772-4776 ◽  
Author(s):  
F. K. Shan ◽  
B. I. Kim ◽  
G. X. Liu ◽  
Z. F. Liu ◽  
J. Y. Sohn ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Edge ◽  
Zno Thin Films ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Doped Zno ◽  
Mg Doped

scholarly journals GaN Layers Grown by HVPE on P-type 6H-SiC Substrates

1996 ◽  
Vol 1 ◽  
Author(s):  
A.E. Nikolaev ◽  
Yu.V. Melnik ◽  
M.N. Blashenkov ◽  
N.I. Kuznetsov ◽  
I.P. Nikitina ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Crystal Quality ◽  
Band Edge ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Edge Emission ◽  
X Ray ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

Gallium nitride films were successfully grown by HVPE technique on p-type 6H-SiC substrate. The layers exhibit high crystal quality as was determined by X-ray diffraction. Photoluminescence (PL) of these films was measured. The PL spectra were dominated by band edge emission. Concentration Nd-Na in undoped epitaxial layers ranged from 2×1017 to 1×1019cm−3. Mesa-structures formed by reactive ion etching showed good rectifying current-voltage characteristics for GaN/SiC pn heterojunctions.

Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

2010 ◽  
Vol 19 (2) ◽  
pp. 027202 ◽  
Author(s):  
Long Xue ◽  
Li Xaing ◽  
Lin Peng-Ting ◽  
Cheng Xing-Wang ◽  
Liu Ying ◽  
...  
Keyword(s):  
Band Edge ◽  
Zno Films ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Full Width ◽  
Half Maximum ◽  
Edge Emission ◽  
Mg Doping ◽  
Doped Zno ◽  
Mg Doped
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