Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN

1996 ◽  
Vol 68 (10) ◽  
pp. 1371-1373 ◽  
Author(s):  
X. H. Wu ◽  
D. Kapolnek ◽  
E. J. Tarsa ◽  
B. Heying ◽  
S. Keller ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Nucleation Layer ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Growth optimization for high quality GaN films grown by metal-organic chemical vapor deposition

2008 ◽  
Vol 1068 ◽  
Author(s):  
Jung Hun Jang ◽  
A M Herrero ◽  
Seungyoung Son ◽  
B Gila ◽  
C Abernathy ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Crystalline Quality ◽  
Organic Chemical ◽  
Nucleation Layer ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTGaN layers were grown on c-plane sapphire substrates by using a conventional two step growth method via metal organic chemical vapor deposition (MOCVD). The effect of different growth conditions used in the deposition of the low temperature nucleation layer and high temperature islands on the crystalline quality of the GaN layers was investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). The polar (tilt) and azimuthal (twist) spread were estimated from the full width at half maximum (FWHM) values of the omega rocking curves (¥ø-RCs) recorded from the planes parallel and perpendicular to the sample surface. It was found from the XRD and TEM study that the edge and mixed type threading dislocations are dominant defects so that the relevant figure of merit (FOM) for the crystalline quality should be considered only by the FWHM value of ¥ø-RC of the surface perpendicular plane. The result showed that the mixed- and edge-types dislocations were strongly associated with the growth conditions used in the deposition of the nucleation layer and high temperature islands.

Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer

1999 ◽  
Vol 74 (9) ◽  
pp. 1242-1244 ◽  
Author(s):  
A. Strittmatter ◽  
A. Krost ◽  
M. Straßburg ◽  
V. Türck ◽  
D. Bimberg ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Organic Chemical ◽  
Nucleation Layer ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Nucleation layer design for growth of a high-quality AlN epitaxial film on a Si(111) substrate

CrystEngComm ◽  
2018 ◽  
Vol 20 (11) ◽  
pp. 1483-1490 ◽  
Author(s):  
Yuan Li ◽  
Wenliang Wang ◽  
Xiaochan Li ◽  
Liegen Huang ◽  
Yulin Zheng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Epitaxial Film ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
High Quality ◽  
Nucleation Layer ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

A high-quality AlN epitaxial film has been grown on a Si(111) substrate by metal–organic chemical vapor deposition through designing the AlN nucleation layer.

scholarly journals Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

2021 ◽  
Vol 15 (6) ◽  
pp. 2170024
Author(s):  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Kaitian Zhang ◽  
Zixuan Feng ◽  
Hongping Zhao
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS2 Atomic Layers

ACS Nano ◽  
2020 ◽  
Author(s):  
Assael Cohen ◽  
Avinash Patsha ◽  
Pranab K. Mohapatra ◽  
Miri Kazes ◽  
Kamalakannan Ranganathan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition

2021 ◽  
Vol 118 (16) ◽  
pp. 162109
Author(s):  
Esmat Farzana ◽  
Fikadu Alema ◽  
Wan Ying Ho ◽  
Akhil Mauze ◽  
Takeki Itoh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Schottky Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Schottky Barrier Diode ◽  
Organic Chemical ◽  
Field Plate ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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