Modulation bandwidth of high‐power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes
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2005 ◽
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1998 ◽
2006 ◽
Vol 50
(11-12)
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pp. 1767-1773
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1991 ◽
Vol 27
(7)
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pp. 1859-1862
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