Modulation bandwidth of high‐power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes

1996 ◽  
Vol 68 (9) ◽  
pp. 1186-1188 ◽  
Author(s):  
I. E. Berishev ◽  
A. Yu. Gorbachev ◽  
V. A. Mishournyi ◽  
N. D. Ilyinskaya ◽  
A. L. Stankevich ◽  
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1997 ◽  
Vol 33 (12) ◽  
pp. 1084 ◽  
Author(s):  
R. Hiroyama ◽  
T. Uetani ◽  
Y. Bessho ◽  
M. Shono ◽  
M. Sawada ◽  
...  

2012 ◽  
Vol 5 (6) ◽  
pp. 062101 ◽  
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Sumiko Fujisaki ◽  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Shigehisa Tanaka ◽  
Shinji Tsuji ◽  
...  

1990 ◽  
Vol 57 (26) ◽  
pp. 2762-2763 ◽  
Author(s):  
T. R. Chen ◽  
L. E. Eng ◽  
Y. H. Zhuang ◽  
Y. J. Xu ◽  
H. Zaren ◽  
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2009 ◽  
Vol 15 (S2) ◽  
pp. 598-599
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B Foran ◽  
N Ives ◽  
T Yeoh ◽  
M Brodie ◽  
Y Sin ◽  
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Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009


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