Modified donor–acceptor pair luminescence in heavily nitrogen‐doped zinc selenide

1995 ◽  
Vol 67 (22) ◽  
pp. 3307-3309 ◽  
Author(s):  
C. Kothandaraman ◽  
G. F. Neumark ◽  
R. M. Park
Keyword(s):  
Zinc Selenide ◽  
Acceptor Pair ◽  
Nitrogen Doped ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Donor–acceptor pair luminescence in nitrogen-doped ZnO films grown on lattice-matched ScAlMgO4 (0001) substrates

2003 ◽  
Vol 127 (4) ◽  
pp. 265-269 ◽  
Author(s):  
K. Tamura ◽  
T. Makino ◽  
A. Tsukazaki ◽  
M. Sumiya ◽  
S. Fuke ◽  
...  
Keyword(s):  
Zno Films ◽  
Acceptor Pair ◽  
Nitrogen Doped ◽  
Donor Acceptor ◽  
Doped Zno ◽  
Donor Acceptor Pair ◽  
Lattice Matched

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

1999 ◽  
Vol 75 (9) ◽  
pp. 1243-1245 ◽  
Author(s):  
I. Kuskovsky ◽  
D. Li ◽  
G. F. Neumark ◽  
V. N. Bondarev ◽  
P. V. Pikhitsa
Keyword(s):  
Continuous Wave ◽  
Acceptor Pair ◽  
Potential Fluctuations ◽  
Donor Acceptor ◽  
Heavily Doped ◽  
Donor Acceptor Pair ◽  
Doped Materials

Photoassociation due to electron transfer. Exciplex formation in non-polar solvent

1971 ◽  
Vol 24 (9) ◽  
pp. 1797 ◽  
Author(s):  
RJ McDonald ◽  
BK Selinger
Keyword(s):  
Polar Solvent ◽  
Excitation Energy Transfer ◽  
Acceptor Pair ◽  
Excitation Spectra ◽  
Fluorescence Excitation ◽  
Exciplex Formation ◽  
Reversible Dissociation ◽  
Fluorescence Excitation Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Exciplexes may be formed by exciting either partner of a given electron donor-acceptor pair. As the formation of such exciplexes is reversible, dissociation may lead to excitation energy transfer. ��� The temperature dependence of fluorescence excitation spectra has proved to be a powerful tool for exploring these systems.

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